KBU610

KBU610

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    KBU

  • 描述:

    桥式整流器/整流桥 VRM=1000V,IO=6.0A,IFSM=175A,VF=1.0V,IR=10uA

  • 数据手册
  • 价格&库存
KBU610 数据手册
KBU6005 THRU KBU610 Reverse Voltage - 50 to 1000 Volts Forward Current - 6.0 Amperes SILICON BRIDGE RECTIFIERS Features KBU  The plastic package carries Underwriters Laboratory .157(4.0)*45° Flammability Classification 94V-0 0.935(23.7) 0.895(22.7)  Ideal for printed circuit boards  Low reverse leakage 0.15 x0.23L (3.8 x5.7L) HOLE THRU 0.300 (7.5) 0.700(17.8) 0.600(16.8)  High forward surge current capability  High temperature soldering guaranteed: 260°C/10 seconds,0.375”(9.5mm) lead length, 0.780(19.8) 0.740(18.8) AC 5 lbs. (2.3kg) tension 0.669 MIN. (17.0) 0.866 MIN. (22.0) Mechanical Data 0.052(1.3) DIA. 0.048(1.2) Case : JEDEC KBU Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.27ounce,7.59grams 0.220(5.6) 0.180(4.6) 0.087(2.2) 0.071(1.8) 0.280(7.1) 0.236(6.0) Maximum Ratings And Electrical Characteristics Dimensions in inches and (millimeters) Ratings at 25°C ambient temperature unless otherwisespecified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward output rectified current at TA=100 ℃ Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage drop per birdge element at 6.0A Maximum DC reverse current TA=25°C at rated DC blocking voltage TA=125°C Typical Junction Capacitance Typical Thermal Resistance (Note 1) Operating junction temperature range storage temperature range SYMBOLS VRRM VRMS VDC MDD MDD KBU6005 KBU601 50 35 50 100 70 100 MDD KBU602 MDD KBU604 MDD KBU606 MDD KBU608 MDD KBU610 UNITS 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 V V V I(AV) 6.0 A IFSM 250 A VF 1.1 V 10 1.0 200 2.7 -55 to +150 -55 to +150 μA mA pF °C/W °C °C IR CJ RθJA TJ TSTG NOTES: 1.Thermal resistance from Junction to Ambemt on P.C.board mounting. http://www.microdiode.com Rev:2024A3 Page :1 KBU6005 THRU KBU610 Reverse Voltage - 50 to 1000 Volts Forward Current - 6.0 Amperes Ratings And Characteristic Curves Fig. 2 Maximum Non-repetitive Peak Forward Surge Current Fig. 1 Derating Curve for Output Rectified Current 250 Peak Forward Surge Current, Amperes Average Forward Output Current, Amperes 6.0 4.0 60Hz Resistive of Inductive Load 2.0 0 0 50 100 8.3ms Single half-sine-Wave [JEDEC Method] 200 150 100 50 10 1 100 Number of Cycles at 60HZ 150 o Fig. 4 Typical Reverse Characteristics Case Temperature, C 10 Fig. 3 Typical Instantaneous Forward Characteristics Tc=100 C Instantaneous Reverse Current ,Amperes 100 40 10 4.0 1.0 0.1 TA=25 C .01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage, % 0.1 Tj=25 C Pulse Width=300us 2% duty cycle .01 0.6 0.7 0.8 0.9 1.0 1.1 Fig. 5 Typical Junction Capacitance 1.2 Instantaneous Forward Voltage, Volts 400 1.3 Capacitance, pF Instantaneous Forward Current, Amperes 20 1.0 100 10 Tj=25 C f=1.0MHz Ving =50mV p.p. 1 1.5 2 10 100 Reverse Voltage, Volts The curve above is for reference only. http://www.microdiode.com Rev:2024A3 Page :2
KBU610 价格&库存

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KBU610
    •  国内价格
    • 20+0.79600

    库存:185

    KBU610
    •  国内价格
    • 1+2.62506
    • 30+2.53328
    • 100+2.34971
    • 500+2.16614
    • 1000+2.07435
    • 2000+1.98256

    库存:20

    KBU610
    •  国内价格
    • 5+2.44613
    • 50+1.98257
    • 150+1.78393
    • 400+1.41814
    • 2400+1.30782
    • 4800+1.24157

    库存:2456