MSB30M

MSB30M

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DBS-4P_6.6X7.05MM_SM

  • 描述:

    桥式整流器/整流桥 VRM=1000V,IO=3.0A,VF=1.1V,IR=5uA

  • 详情介绍
  • 数据手册
  • 价格&库存
MSB30M 数据手册
MSB30D THRU MSB30M Voltage Range - 200 to 1000 Volts Current - 3.0 Ampere GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIERS Features UMSB  Glass Passivated Chip Junction  Reverse Voltage - 200 to 1000 V .276(7.00) .244(6.20)  Forward Current- 3 A  High Surge Current Capability .045(1.15) .037(0.95) (1) .350(8.90) .331(8.40) .299(7.60) .280(7.10) .055(1.6) .0315(1.0) (2) Designed for Surface Mount Application .209(5.30) .193(4.90) (3) Mechanical Data Top Viev (4) Bottom View (1) (2) - + .012(0.29) .070(0.17) .122(3.10) .003(0.08) .002(0.04) .059(1.5) .051(1.3) Case: JEDEC UMSB molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026  Polarity: Polarity symbol marking on body Mounting Position: Any Weight : 0.00825 ounce, 0.234 grams .114(2.90) ~ ~ (3) (4) Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Symbols Marking Code MSB30D MSB30G MSB30J MSB30K MSB30M MDD MB30D MDD MB30G MDD MB30J MDD MB30K MDD MB30M Units Maximum Repetitive Peak Reverse Voltage V RRM 200 400 600 800 1000 V Maximum RMS voltage V RMS 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 200 400 600 800 1000 V Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 3.0 A Maximum DC Reverse Current @ T a =25 °C at Rated DC Blocking Voltage @ T a =125 °C Typical Junction Capacitance(Note1) Typical Thermal Resistance(Note2) Operating and Storage Temperature Range I F(AV) 3 A I FSM 80 A VF 1.1 IR 5 100 Cj 40 RθJA RθJC RθJL 60 10 25 °C/W T j , T stg -55 ~ +150 °C V μA pF Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. P.C.B. mounted with 4×1.5"×1.5"(3.81×3.81 cm)copper pad areas. http://www.microdiode.com Rev:2025A3 Page :1 MSB30D THRU MSB30M Voltage Range - 200 to 1000 Volts Current - 3.0 Ampere Typical Characterisitics Fig.2 Typical Reverse Characteristics Fig.1 Average Rectified Output Current Derating Curve 5.0 Average Rectified Output Current (A) 4.0 3.0 2.0 1.0 Resistive or Inductive Load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current(μ A) 100 TJ=125°C 10 1.0 TJ=25°C 0.1 00 Case Temperature (°C) 20 40 60 80 100 120 140 percent of Rated Peak Reverse Voltage (%) Fig.3 Typical Instaneous Forward Fig.4 Typical Junction Capacitance Characteristics TJ=25°C 100 Junction Capacitance (pF) Instaneous Forward Current (A) 10 1.0 0.1 pulse with 300μ s TJ=25°C 10 1% duty cycle 0.01 1 00 0.5 1.0 1.5 2.0 0.1 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 100 Fig.6- Typical Transient Thermal Impedance 120 100 100 80 60 40 20 8.3 ms Single Half Sine Wave (JEDEC Method) 1 10 Number of Cycles 100 Transient Thermal Impedance(°C/W) Peak Forward Surage Current (A) 10 Reverse Voltage (V) Instaneous Forward Voltage (V) 00 1.0 10 1 0.01 0.1 1 10 100 t, Pulse Duration(sec) The curve above is for reference only. http://www.microdiode.com Rev:2025A3 Page :2 MSB30D THRU MSB30M Voltage Range - 200 to 1000 Volts Current - 3.0 Ampere Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). http://www.microdiode.com Rev:2025A3 Page :3
MSB30M
- 物料型号:MSB30D, MSB30G, MSB30K, MSB30M, MB30D, MB30J, MB30G, MB30K, MB30M。 - 器件简介:这些整流器设计用于表面安装应用,具有玻璃钝化芯片结,可承受高达3.0安培的正向电流和100至1000伏的反向电压。 - 引脚分配:文档中提供了顶视图和底视图,但没有明确指出具体的引脚分配。 - 参数特性:包括最大重复峰值反向电压、最大RMS电压、最大直流阻断电压、最大平均正向整流电流、峰值正向浪涌电流、最大正向电压等。 - 功能详解:整流器具有高浪涌电流能力,适用于电阻性或电感性负载,对于电容性负载需要降低电流20%。 - 应用信息:适用于需要高电压和高电流整流的应用场合。 - 封装信息:封装类型为UMSB,端子可按照MIL-STD-750方法2026进行焊接。
MSB30M 价格&库存

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MSB30M
  •  国内价格
  • 5+0.75148
  • 50+0.61627
  • 150+0.54878
  • 500+0.49808
  • 3000+0.38071
  • 6000+0.36050

库存:2020

MSB30M
  •  国内价格
  • 20+1.30280
  • 100+0.77720
  • 800+0.54410
  • 3000+0.38860
  • 6000+0.36910
  • 30000+0.34200

库存:3000

MSB30M
  •  国内价格
  • 5+0.71030
  • 50+0.58251
  • 600+0.47079
  • 1200+0.46373
  • 3000+0.35986

库存:2375