MSB40M

MSB40M

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    UMSB

  • 描述:

    桥式整流器/整流桥 VRM=1000V,IO=4.0A,VF=1.1V,IR=5uA

  • 详情介绍
  • 数据手册
  • 价格&库存
MSB40M 数据手册
MSB40D THRU MSB40M Voltage Range - 200 to 1000 Volts Current - 4.0 Ampere GLASS PASSIVATED SURFACE MOUNT BRIDGE RECTIFIERS Features UMSB  Glass Passivated Chip Junction  Reverse Voltage - 200 to 1000 V .276(7.00) .244(6.20) .045(1.15) .037(0.95) (1) (2) .350(8.90) .331(8.40) .299(7.60) .280(7.10) .055(1.6) .0315(1.0)  Forward Current- 4 A  High Surge Current Capability .209(5.30) .193(4.90) Designed for Surface Mount Application Mechanical Data (3) Top Viev (4) Bottom View (1) (2) Case: JEDEC UMSB molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Polarity symbol marking on body  Mounting Position: Any Weight : 0.00825 ounce, 0.234 grams + .012(0.29) .070(0.17) .122(3.10) .003(0.08) .002(0.04) .059(1.5) .051(1.3) - .114(2.90) ~ ~ (3) (4) Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Symbols Marking Code MSB40D MSB40G MSB40J MSB40K MSB40M MDD MB40D MDD MB40G MDD MB40J MDD MB40K MDD MB40M Units Maximum Repetitive Peak Reverse Voltage V RRM 200 400 600 800 1000 V Maximum RMS voltage V RMS 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 200 400 600 800 1000 V Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 4.0 A Maximum DC Reverse Current @ T a =25 °C at Rated DC Blocking Voltage @ T a =125 °C Typical Junction Capacitance per element Typical Thermal Resistance(Note2) Operating and Storage Temperature Range I F(AV) 4 A I FSM 95 A VF 1.1 V IR 5 100 μA Cj 50 pF RθJA RθJC RθJL 60 10 25 °C/W T j , T stg -55 ~ +150 °C Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. P.C.B. mounted with 4×1.5"×1.5"(3.81×3.81 cm)copper pad areas. http://www.microdiode.com Rev:2025A3 Page :1 MSB40D THRU MSB40M Voltage Range - 200 to 1000 Volts Current - 4.0 Ampere Typical Characterisitics Fig.2 Typical Reverse Characteristics Fig.1 Average Rectified Output Current Derating Curve 100 Instaneous Reverse Current(μ A) Average Rectified Output Current (A) 5.0 4.0 3.0 2.0 1.0 Resistive or Inductive Load 0.0 25 50 75 100 125 150 TJ=125°C 10 1.0 TJ=25°C 0.1 175 00 Case Temperature (°C) 20 40 60 80 100 120 140 percent of Rated Peak Reverse Voltage (%) Fig.3 Typical Instaneous Forward Fig.4 Typical Junction Capacitance Characteristics TJ=25°C 100 Junction Capacitance (pF) Instaneous Forward Current (A) 10 1.0 0.1 pulse with 300μ s 1% duty cycle 0.01 00 0.5 1.0 1.5 TJ=25°C 10 1 2.0 0.1 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 100 Fig.6- Typical Transient Thermal Impedance 133 100 114 95 76 57 38 19 8.3 ms Single Half Sine Wave (JEDEC Method) 1 10 Number of Cycles 100 Transient Thermal Impedance(°C/W) Peak Forward Surage Current (A) 10 Reverse Voltage (V) Instaneous Forward Voltage (V) 00 1.0 10 1 0.01 0.1 1 10 100 t, Pulse Duration(sec) The curve above is for reference only. http://www.microdiode.com Rev:2025A3 Page :2 MSB40D THRU MSB40M Voltage Range - 200 to 1000 Volts Current - 4.0 Ampere Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). http://www.microdiode.com Rev:2025A3 Page :3
MSB40M
物料型号:MSB40D、MSB40J、MSB40G、MSB40K、MSB40M

器件简介:这些整流器是玻璃钝化芯片结,设计用于表面安装应用,具有高浪涌电流能力。

引脚分配:文档中提供了UMSB封装的顶视图和底视图,但没有明确指出每个引脚的功能。

参数特性: - 电压范围:200至1000伏特 - 电流:4.0安培 - 正向电压降:在25摄氏度和4.0安培时,最大为1.1伏特 - 最大正向浪涌电流:在8.3毫秒单半正弦波下,为95至125安培 - 最大直流反向电流:在额定直流阻断电压下,温度为25摄氏度时,小于或等于5微安

功能详解:文档提供了整流器的平均整流输出电流降额曲线、典型瞬态正向特性、最大非重复峰值正向浪涌电流、典型反向特性和典型结电容。

应用信息:适用于电阻性或感性负载,对于电容性负载需降低电流20%。

封装信息:UMSB封装,尺寸以英寸和毫米提供,符合MIL-STD-750标准2026的可焊性。
MSB40M 价格&库存

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MSB40M
  •  国内价格
  • 100+0.44126
  • 1000+0.42262

库存:1125

MSB40M
  •  国内价格
  • 5+0.93525
  • 50+0.77183
  • 150+0.69008

库存:160

MSB40M
  •  国内价格
  • 5+1.03069
  • 50+0.85059
  • 150+0.76050
  • 500+0.69290
  • 3000+0.53375
  • 6000+0.50669

库存:17588

MSB40M
    •  国内价格
    • 1+0.81720
    • 200+0.56400
    • 1500+0.51240
    • 3000+0.47880

    库存:393

    MSB40M
      •  国内价格
      • 20+1.78330
      • 100+1.06370
      • 800+0.74460
      • 3000+0.53190
      • 6000+0.50530
      • 30000+0.46800

      库存:0