UM10B

UM10B

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    UMB

  • 描述:

    Vr=1000V VF=1.1@500mA

  • 数据手册
  • 价格&库存
UM10B 数据手册
UM1B THRU UM10B Voltage Range - 100 to 1000 Volts Current - 1.0 Ampere SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Features UMB  Glass passivated die construction Low  forward voltage drop +  High current capability  High surge current capability 0.047(1.2) 0.039(1.0) 0.106(2.7) 0.091(2.3) Designed for surface mount application 0.15(3.8) 0.134(3.4) Plastic material-UL flammability 94V-0 0.028(0.70) 0.02(0.51) Mechanical Data (3) (4) Case: JEDEC UMB molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Polarity symbol marking on body Mounting Position: Any Weight : 0.0016 ounce, 0.45 grams - + 0.0079(0.20) 0.0047(0.12) 0.157(4.0) 0.142(3.6) 0.032(0.82) 0.02(0.51) 0.201(5.1) 0.181(4.6) ~ ~ (2) (1) Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Symbols MDD UM1B MDD UM2B MDD UM4B MDD UM6B MDD UM8B MDD UM10B Units Maximum Repetitive Peak Reverse Voltage V RRM 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 100 200 400 600 800 1000 V Marking Code Average Rectified Output Current at T c = 115 °C Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 1.0A Maximum DC Reverse Current @ T a =25 °C at Rated DC Blocking Voltage @ T a =125 °C Typical Junction Capacitance(Note3) Typical Thermal Resistance Operating and Storage Temperature Range IO 1 A I FSM 35 A VF 1.1 V IR 5 40 μA Cj 13 pF RθJA 85 °C/W T j , T stg -55 ~ +150 °C NOTES:1.On glass epoxy P.C.B. mounted on 0.05x0.05''(1.3x1.3mm) pads 2.On aluminum substrate P.C.B. with on area of 0.8''x0.8''(20x20mm) mounted on 0.05X0.05''(1.3X1.3mm) solder pad 3.Measured at 1.0MHz and applied reverse voltage of 4.0 volts. http://www.microdiode.com Rev:2024A2 Page :1 UM1B THRU UM10B Voltage Range - 100 to 1000 Volts Current - 1.0 Ampere Typical Characterisitics Fig.1 Average Rectified Output Current Derating Curve Fig.2 Typical Reverse Characteristics 1.2 100 TJ=125°C 0.8 0.6 0.4 0.2 Resistive or Inductive Load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current( ) A μ Average Rectified Output Current (A) 1.0 10 1.0 TJ=25°C 0.1 00 Case Temperature (°C) 40 60 80 100 140 Fig.4 Typical Junction Capacitance 100 10 120 percent of Rated Peak Reverse Voltage (%) Fig.3 Typical Instaneous Forward Characteristics TJ=25° TJ=25°C TJ=25°C Junction Capacitance (pF) Instaneous Forward Current (A) 20 1.0 0.1 pulse with 300μ s 1% duty cycle 0.01 10 1 00.. 00 0.5 1.0 1.5 2.0 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surage Current (A) 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2024A2 Page :2 UM1B THRU UM10B Voltage Range - 100 to 1000 Volts Current - 1.0 Ampere Suggested Pad Layout Q1 1.0×1.4 39×55 P1 Q2 Dim Min P1 2.5 P2 4.3 Q1 1.4 Q2 1.0 P2 http://www.microdiode.com Rev:2024A2 Page :3
UM10B 价格&库存

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UM10B
  •  国内价格
  • 10+0.10800
  • 100+0.08640
  • 300+0.08100
  • 2000+0.07560

库存:1518

UM10B
    •  国内价格
    • 1+0.47740
    • 500+0.15950
    • 2500+0.10615
    • 5000+0.08701

    库存:497

    UM10B
      •  国内价格
      • 20+0.06900

      库存:4635

      UM10B
      •  国内价格
      • 20+0.22097
      • 200+0.17604
      • 600+0.15110
      • 5000+0.12345
      • 10000+0.11049
      • 20000+0.10347

      库存:4252