UM1B THRU UM10B
Voltage Range - 100 to 1000 Volts
Current - 1.0 Ampere
SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER
Features
UMB
Glass passivated die construction Low
forward voltage drop
+
High current capability
High surge current capability
0.047(1.2)
0.039(1.0)
0.106(2.7)
0.091(2.3)
Designed for surface mount application
0.15(3.8)
0.134(3.4)
Plastic material-UL flammability 94V-0
0.028(0.70)
0.02(0.51)
Mechanical Data
(3)
(4)
Case: JEDEC UMB molded plastic body
Terminals: Solderable per MIL-STD-750,Method 2026
Polarity: Polarity symbol marking on body
Mounting Position: Any
Weight : 0.0016 ounce, 0.45 grams
-
+
0.0079(0.20)
0.0047(0.12)
0.157(4.0)
0.142(3.6)
0.032(0.82)
0.02(0.51)
0.201(5.1)
0.181(4.6)
~
~
(2)
(1)
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
Symbols
MDD
UM1B
MDD
UM2B
MDD
UM4B
MDD
UM6B
MDD
UM8B
MDD
UM10B
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
100
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
V DC
100
200
400
600
800
1000
V
Marking Code
Average Rectified Output Current
at T c = 115 °C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
Maximum Forward Voltage at 1.0A
Maximum DC Reverse Current
@ T a =25 °C
at Rated DC Blocking Voltage
@ T a =125 °C
Typical Junction Capacitance(Note3)
Typical Thermal Resistance
Operating and Storage Temperature Range
IO
1
A
I FSM
35
A
VF
1.1
V
IR
5
40
μA
Cj
13
pF
RθJA
85
°C/W
T j , T stg
-55 ~ +150
°C
NOTES:1.On glass epoxy P.C.B. mounted on 0.05x0.05''(1.3x1.3mm) pads
2.On aluminum substrate P.C.B. with on area of 0.8''x0.8''(20x20mm) mounted on 0.05X0.05''(1.3X1.3mm) solder pad
3.Measured at 1.0MHz and applied reverse voltage of 4.0 volts.
http://www.microdiode.com
Rev:2024A2
Page :1
UM1B THRU UM10B
Voltage Range - 100 to 1000 Volts
Current - 1.0 Ampere
Typical Characterisitics
Fig.1 Average Rectified Output Current
Derating Curve
Fig.2 Typical Reverse Characteristics
1.2
100
TJ=125°C
0.8
0.6
0.4
0.2
Resistive or Inductive Load
0.0
25
50
75
100
125
150
175
Instaneous Reverse Current(
)
A
μ
Average Rectified Output Current (A)
1.0
10
1.0
TJ=25°C
0.1
00
Case Temperature (°C)
40
60
80
100
140
Fig.4 Typical Junction Capacitance
100
10
120
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics TJ=25°
TJ=25°C
TJ=25°C
Junction Capacitance (pF)
Instaneous Forward Current (A)
20
1.0
0.1
pulse with 300μ
s
1% duty cycle
0.01
10
1
00..
00
0.5
1.0
1.5
2.0
0.1
1.0
10
100
Reverse Voltage (V)
Instaneous Forward Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surage Current (A)
40
30
20
10
8.3 ms Single Half Sine Wave (JEDEC
Method)
00
1
10
100
Number of Cycles
The curve above is for reference only.
http://www.microdiode.com
Rev:2024A2
Page :2
UM1B THRU UM10B
Voltage Range - 100 to 1000 Volts
Current - 1.0 Ampere
Suggested Pad Layout
Q1
1.0×1.4
39×55
P1
Q2
Dim
Min
P1
2.5
P2
4.3
Q1
1.4
Q2
1.0
P2
http://www.microdiode.com
Rev:2024A2
Page :3
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