1N5817 THRU 1N5819
Reverse Voltage - 20 to 40 Volts
Forward Current - 1.0 Ampere
SCHOTTKY BARRIER RECTIFIER
Features
DO-41
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
1.0 (25.4)
MIN.
Metal silicon junction,majority carrier conduction
Guardring for overvoltage protection
Low power loss,high efficiency
High current capability,low forward voltage drop
High surge capability
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160(4.1)
For use in low voltage,high frequency inverters, free
wheeling,and polarity protection applications
High temperature soldering guaranteed:
250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs.
1.0 (25.4)
MIN.
(2.3kg) tension
0.025 (0.65)
0.021 (0.55)
DIA.
Mechanical Data
Case : JEDEC DO-41 Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position : Any
Weight : 0.012 ounce, 0.33 grams
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unlss otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
SYMBOLS
Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TL=90℃
Peak forward surge current
8.3ms single half sine-wave
superimposed onrated load (JEDEC Method)
VRRM
VRMS
VDC
MDD
1N5817
MDD
1N5818
20
14
20
30
21
30
40
28
40
UNITS
V
V
V
I(AV)
1.0
A
IFSM
25
A
Maximum instantaneous forward voltage at 1.0A
TA=25℃
Maximum DC reverse current
at rated DC blocking voltage
TA=100℃
VF
IR
0.5
10.0
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
CJ
110.0
RθJA
50.0
Operating junction and storage temperature range
MDD
1N5819
TJ,TSTG
0.450
0.550
-65 to +150
0.600
V
mA
pF
℃/W
℃
Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
http://www.microdiode.com
Rev:2024A1
Page :1
1N5817 THRU 1N5819
Reverse Voltage - 20 to 40 Volts
Forward Current - 1.0 Ampere
FIG. 1- FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD
CURRENT,AMPERES
1
0.75
RESISTIVE OR
INDUCTIVE LOAD
0.375” (9.5mm)
LEAD LENGTH
0.5
0.25
0
0
20
40
60
80
100
120
140
LEAD TEMPERATURE, C
PEAK FORWARD SURGE CURRENT,
AMPERES
Ratings And Characteristic Curves
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FOR WARD
SURGE CURRENT
30
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
25
20
15
10
5.0
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
50
10
TJ=125 C
1
TJ=25 C
0.1
PULSE WIDTH=300 µs
1%DUTY CYCLE
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
MILLIAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
TJ=25 C
f=1.0MHz
Vsig=50mVp-p
10
REVERSE VOLTAGE,VOLTS
TRANSIENT THERMAL IMPEDANCE,
C/W
JUNCTION CAPACITANCE, pF
FIG. 5-TYPICAL JUNCTION CAPACITANCE
10
TJ=100 C
1
TJ=75 C
0.1
TJ=25 C
0.01
20
40
60
80
100
PERCENT OF PEAK REVERSE VOLTAGE,%
400
1.0
10
0.001
0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
0.1
1,00
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
100
t,PULSE DURATION,sec.
The curve above is for reference only.
http://www.microdiode.com
Rev:2024A1
Page :2
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