1N5819

1N5819

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DO-41(DO-204AL)

  • 描述:

    肖特基二极管 VR=40V IF=1A VF=0.60V IR=500uA

  • 数据手册
  • 价格&库存
1N5819 数据手册
1N5817 THRU 1N5819 Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere SCHOTTKY BARRIER RECTIFIER Features DO-41  Plastic package has Underwriters Laboratory Flammability Classification 94V-0 1.0 (25.4) MIN.  Metal silicon junction,majority carrier conduction  Guardring for overvoltage protection  Low power loss,high efficiency  High current capability,low forward voltage drop  High surge capability 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160(4.1)  For use in low voltage,high frequency inverters, free wheeling,and polarity protection applications  High temperature soldering guaranteed: 250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. 1.0 (25.4) MIN. (2.3kg) tension 0.025 (0.65) 0.021 (0.55) DIA. Mechanical Data Case : JEDEC DO-41 Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.012 ounce, 0.33 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375”(9.5mm) lead length at TL=90℃ Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) VRRM VRMS VDC MDD 1N5817 MDD 1N5818 20 14 20 30 21 30 40 28 40 UNITS V V V I(AV) 1.0 A IFSM 25 A Maximum instantaneous forward voltage at 1.0A TA=25℃ Maximum DC reverse current at rated DC blocking voltage TA=100℃ VF IR 0.5 10.0 Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) CJ 110.0 RθJA 50.0 Operating junction and storage temperature range MDD 1N5819 TJ,TSTG 0.450 0.550 -65 to +150 0.600 V mA pF ℃/W ℃ Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted http://www.microdiode.com Rev:2024A1 Page :1 1N5817 THRU 1N5819 Reverse Voltage - 20 to 40 Volts Forward Current - 1.0 Ampere FIG. 1- FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,AMPERES 1 0.75 RESISTIVE OR INDUCTIVE LOAD 0.375” (9.5mm) LEAD LENGTH 0.5 0.25 0 0 20 40 60 80 100 120 140 LEAD TEMPERATURE, C PEAK FORWARD SURGE CURRENT, AMPERES Ratings And Characteristic Curves FIG. 2-MAXIMUM NON-REPETITIVE PEAK FOR WARD SURGE CURRENT 30 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 25 20 15 10 5.0 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 50 10 TJ=125 C 1 TJ=25 C 0.1 PULSE WIDTH=300 µs 1%DUTY CYCLE 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 TJ=25 C f=1.0MHz Vsig=50mVp-p 10 REVERSE VOLTAGE,VOLTS TRANSIENT THERMAL IMPEDANCE, C/W JUNCTION CAPACITANCE, pF FIG. 5-TYPICAL JUNCTION CAPACITANCE 10 TJ=100 C 1 TJ=75 C 0.1 TJ=25 C 0.01 20 40 60 80 100 PERCENT OF PEAK REVERSE VOLTAGE,% 400 1.0 10 0.001 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0.1 1,00 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 100 100 t,PULSE DURATION,sec. The curve above is for reference only. http://www.microdiode.com Rev:2024A1 Page :2
1N5819 价格&库存

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1N5819
  •  国内价格
  • 1+0.51635
  • 500+0.17135
  • 2500+0.11466
  • 5000+0.09396

库存:7888

1N5819
  •  国内价格
  • 1+0.09590
  • 100+0.09430

库存:5217

1N5819
  •  国内价格
  • 5+0.13441
  • 50+0.12241
  • 500+0.11041
  • 1000+0.09840
  • 2500+0.09280
  • 5000+0.08800

库存:4927

1N5819
  •  国内价格
  • 20+0.34700
  • 100+0.20700
  • 500+0.14490
  • 5000+0.10350
  • 10000+0.09830
  • 50000+0.09110

库存:5003