PESD3V3S1UB,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PESDxS1UB series ESD protection diodes in SOD523 package Rev. 02 — 24 August 2009 Product data sheet 1. Product profile 1.1 General description Unidirectional ESD protection diode in a SOD523 plastic package designed to protect one transmission or data line from the damage caused by ESD (ElectroStatic Discharge) and other transients. 1.2 Features n n n n n n n Unidirectional ESD protection of one line Max. peak pulse power: PPP = 330 W at tp = 8/20 µs Low clamping voltage: VCL = 20 V at IPP = 18 A Ultra low leakage current: IRM < 700 nA ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 18 A at tp = 8/20 µs 1.3 Applications n n n n n Computers and peripherals Communication systems Audio and video equipment Data lines CAN bus protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage Conditions Value Unit PESD3V3S1UB 3.3 V PESD5V0S1UB 5 V PESD12VS1UB 12 V PESD15VS1UB 15 V PESD24VS1UB 24 V PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package Table 1. Quick reference data …continued Symbol Parameter Conditions Cd diode capacitance VR = 0 V; f = 1 MHz Value Unit PESD3V3S1UB 207 pF PESD5V0S1UB 152 pF PESD12VS1UB 38 pF PESD15VS1UB 32 pF PESD24VS1UB 23 pF number of protected lines 1 2. Pinning information Table 2. Discrete pinning Pin Description 1 cathode 2 anode Simplified outline Symbol [1] 1 1 2 2 sym035 [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number PESDxS1UB Package Name Description Version SC -79 plastic surface mounted package; 2 leads SOD523 4. Marking Table 4. Marking Type number Marking code PESD3V3S1UB N1 PESD5V0S1UB N2 PESD12VS1UB N3 PESD15VS1UB N4 PESD24VS1UB N5 PESDXS1UB_SERIES_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 2 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit PESD3V3S1UB - 330 W PESD5V0S1UB - 260 W PESD12VS1UB - 180 W PESD15VS1UB - 160 W - 160 W PESD3V3S1UB - 18 A PESD5V0S1UB - 15 A PESD12VS1UB - 5 A PESD15VS1UB - 5 A PESD24VS1UB - 3 A Tj junction temperature - 150 °C Tamb operating ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Min Max Unit - 30 kV PPP Parameter Conditions peak pulse power 8/20 µs [1] PESD24VS1UB peak pulse current IPP [1] 8/20 µs Non-repetitive current pulse 8/20 µs exponentially decay waveform; see Figure 1. Table 6. ESD maximum ratings Symbol Parameter Conditions ESD electrostatic discharge capability IEC 61000-4-2 (contact discharge) PESD3V3S1UB - 30 kV PESD12VS1UB - 30 kV PESD15VS1UB - 30 kV PESD24VS1UB - 23 kV - 10 kV HBM MIL-STD883 Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2. Table 7. ESD standards compliance Standard Conditions IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact) HBM MIL-STD883, class 3 > 4 kV PESDXS1UB_SERIES_2 Product data sheet [1] PESD5V0S1UB PESDxS1UB series [1] [1] © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 3 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % tr = 0.7 ns to 1 ns 0 0 10 20 30 t (µs) Fig 1. 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2 PESDXS1UB_SERIES_2 Product data sheet t 30 ns 40 © NXP B.V. 2009. All rights reserved. Rev. 02 — 24 August 2009 4 of 15 PESDxS1UB series NXP Semiconductors ESD protection diodes in SOD523 package 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter VRWM reverse standoff voltage Conditions Min Typ Max PESD3V3S1UB - - 3.3 V PESD5V0S1UB - - 5 V PESD12VS1UB - - 12 V PESD15VS1UB - - 15 V - - 24 V PESD24VS1UB IRM VBR reverse leakage current see Figure 7 PESD3V3S1UB VRWM = 3.3 V - 0.7 2 µA PESD5V0S1UB VRWM = 5 V - 0.1 1 µA PESD12VS1UB VRWM = 12 V -