PESD5V0V1BL,315

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PESD5V0V1BA; PESD5V0V1BB; PESD5V0V1BL Very low capacitance bidirectional ESD protection diodes Rev. 2 — 9 November 2012 Product data sheet 1. Product profile 1.1 General description Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from the damage caused by ESD and other transients. Table 1. Product overview Type number PESD5V0V1BA Package Package configuration NXP JEITA SOD323 SC-76 very small PESD5V0V1BB SOD523 SC-79 ultra small and flat lead PESD5V0V1BL SOD882 - leadless ultra small 1.2 Features and benefits      Bidirectional ESD protection of one line Very low diode capacitance: Cd = 11 pF Max. peak pulse power: PPP = 45 W Low clamping voltage: VCL = 12.5 V Ultra low leakage current: IRM < 1 nA     ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IEC 61000-4-5 (surge); IPP = 4.8 A AEC-Q101 qualified     Communication systems Portable electronics 10/100 Mbit/s Ethernet FireWire 1.3 Applications     Computers and peripherals Audio and video equipment Cellular handsets and accessories Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage Cd diode capacitance Conditions f = 1 MHz; VR = 0 V Min Typ Max Unit - - 5 V - 11 13 pF PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol PESD5V0V1BA; PESD5V0V1BB 1 cathode (diode 1) 2 cathode (diode 2) [1] 1 1 2 2 sym045 001aab540 PESD5V0V1BL 1 cathode (diode 1) 2 cathode (diode 2) [1] 1 1 2 2 sym045 Transparent top view [1] The marking bar indicates pin 1. 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PESD5V0V1BA SC-76 plastic surface-mounted package; 2 leads SOD323 PESD5V0V1BB SC-79 plastic surface-mounted package; 2 leads SOD523 PESD5V0V1BL - leadless ultra small plastic package; 2 terminals; body 1.0  0.6  0.5 mm SOD882 4. Marking Table 5. Marking codes Type number Marking code PESD5V0V1BA 1K PESD5V0V1BB Z9 PESD5V0V1BL X1 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions peak pulse power tp = 8/20 s peak pulse current tp = 8/20 s Min Max Unit [1] - 45 W [1] - 4.8 A Per diode PPP IPP PESD5V0V1BA_BB_BL Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 November 2012 © NXP B.V. 2012. All rights reserved. 2 of 14 PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per device Tj junction temperature - 150 C Tamb ambient temperature 55 +150 C Tstg storage temperature 65 +150 C [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Table 7. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol Parameter electrostatic discharge voltage VESD [1] Conditions Min Max Unit - 30 kV machine model - 2 kV MIL-STD-883 (human body model) - 16 kV [1] IEC 61000-4-2 (contact discharge) Device stressed with ten non-repetitive ESD pulses. Table 8. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3B (human body model) > 8 kV 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 μs IPP (%) 80 e−t 50 % IPP; 20 μs 40 10 % 0 10 20 30 30 ns 40 t (μs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 s pulse waveform according to IEC 61000-4-5 PESD5V0V1BA_BB_BL Product data sheet Fig 2. ESD pulse waveform according to IEC 61000-4-2 All information provided in this document is subject to legal disclaimers. Rev. 2 — 9 November 2012 © NXP B.V. 2012. All rights reserved. 3 of 14 PESD5V0V1BA/BB/BL NXP Semiconductors Very low capacitance bidirectional ESD protection diodes 6. Characteristics Table 9. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VRWM reverse standoff voltage - - 5 V IRM reverse leakage current VBR breakdown voltage VRWM = 5 V -