LPN1010C
Enhancement Mode N-Channel Power MOSFET
Description
Features
LPN1010C use advanced FSMOSTM technology
to provide low RDS(on),low gate charge,fast switching
and excellent avalanche characteristics. This device is
specially designed to get better ruggedness and
suitable to use in Synchronous-rectification
applications.
VDS,min
100V
ID,pulse
210A
RDS(ON),max@VGS=10V
10mΩ
RDS(ON),max@VGS=4.5V
14mΩ
Qg
72nC
Low RDS(on)&FOM
Extremely low switching loss
Excellent stability and uniformity
Fast switching and soft recovery
Applications
Consumer electronic power supply
Motor control
Synchronous-rectification
Isolated DC/DC convertor
Invertors
Schematic and Package Information
Schematic Diagram
Pin Assignment Top View
Ordering Information
Package
Units/Tube
Tubes/Inner Box
Units/Inner Box
Inner Box/Carton Box
Units/Carton Box
TO220
50
20
1000
6
6000
Product Information
Product
Package
Pb Free
RoHS
Halogen Free
LPN1010C
TO220
yes
yes
yes
LPN1010C_EN_DS_Rev.1.0
www.chip-hope.com
SHENZHEN Chip Hope Micro-electronics LTD Confidential– Customer Use Only
LPN1010C
Enhancement Mode N-Channel Power MOSFET
Absolute Maximum Rating at Tj=25℃
unless otherwise noted
Parameter
Drain source voltage
Gate source voltage
1)
Continuous drain current
2)
Pulsed drain current
3)
Power dissipation
5)
Single pulsed avalanche energy
Operation and storage temperature
Symbol
Value
Unit
VDS
100
V
VGS
±20
V
ID
70
A
ID,puse
210
A
PD
330
W
EAS
100
mJ
Tstg,Tj
-55 to 150
℃
Symbol
Value
Unit
RθJC
0.38
℃/W
RθJA
62.5
℃/W
Thermal Characteristics
Parameter
Thermal resistance,junction-case
4)
Thermal resistance,junction-ambient
Electrical Characteristics at Tj=25℃
Parameter
unless otherwise specified
Symbol
Min.
Drain-source breakdown voltage
BVDSS
100
Gate threshold voltage
VGS(th)
1.0
Drain-source on-state resistance
Drain-source on-state resistance
Typ.
Max.
Unit
Test condition
V
VGS=0V,ID=250uA
2.5
V
VDS= VGS,ID=250uA
RDS(ON)
10.0
mΩ
VGS=10V,ID=10A
RDS(ON)
14.0
mΩ
VGS=4.5V,ID=10A
Gate-source leakage current
IGSS
Drain-source leakage current
IDSS
100
-100
nA
1
uA
Max.
Unit
VGS=20V
VGS=-20V
VDS=100V,VGS=0V
Dynamic Characteristics
Parameter
Symbol
Min.
Typ.
Input capacitance
Ciss
3888.5
pF
Output capacitance
Coss
273.7
pF
Reverse transfer capacitance
Crss
5
pF
Td(on)
49.6
nS
tr
52.5
nS
Td(off)
390
nS
tf
55.2
nS
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test condition
VGS=0V,
VDS=100V,
f=1MHz
VGS=10V,
VDS=50V,
RG=25Ω,
ID=12A
Gate Charge Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Total gate charge
Qg
72
nC
Gate-source charge
Qgs
8.9
nC
Gate-drain charge
Qgd
18.8
nC
Vplateau
3.2
V
Gate plateau voltage
LPN1010C_EN_DS_Rev.1.0
www.chip-hope.com
Test condition
ID=12A,
VDS=50V,
VGS=10V
SHENZHEN Chip Hope Micro-electronics LTD Confidential– Customer Use Only
LPN1010C
Enhancement Mode N-Channel Power MOSFET
Body Diode Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Diode forward current
IS
70
A
Pulsed source current
ISP
210
A
Diode forward voltage
VSD
1.3
V
Reverse recovery time
trr
66.8
nS
Reverse recovery charge
Qrr
139
nC
Peak reverse recovery current
Irrm
3.5
A
Test condition
VGS
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