LPN2010C

LPN2010C Enhancement Mode N-Channel Power MOSFET Description Features LPN2010C use advanced FSMOSTM technology to provide low RDS(on)，low gate charge，fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Synchronous-rectification applications.  VDS,min 100V  ID,pulse 140A  RDS(ON),max@VGS=10V 20mΩ  Qg     Low RDS(on)&FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications      Consumer electronic power supply Motor control Synchronous-rectification Isolated DC/DC convertor Invertors 19.8nC Schematic and Package Information Schematic Diagram Pin Assignment Top View Ordering Information Package Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO220 50 20 1000 6 6000 Product Information Product Package Pb Free RoHS Halogen Free LPN2010C TO220 yes yes yes LPN2010C_EN_DS_Rev.1.0 www.chip-hope.com SHENZHEN Chip Hope Micro-electronics LTD Confidential– Customer Use Only LPN2010C Enhancement Mode N-Channel Power MOSFET Absolute Maximum Rating at Tj=25℃ unless otherwise noted Parameter Drain source voltage Gate source voltage 1） Continuous drain current 2） Pulsed drain current 3） Power dissipation 5） Single pulsed avalanche energy Operation and storage temperature Symbol Value Unit VDS 100 V VGS ±20 V ID 50 A ID,puse 140 A PD 80 W EAS 30 mJ Tstg，Tj -55 to 150 ℃ Symbol Value Unit RθJC 0.38 ℃/W RθJA 62.5 ℃/W Thermal Characteristics Parameter Thermal resistance，junction-case 4） Thermal resistance，junction-ambient Electrical Characteristics at Tj=25℃ Parameter unless otherwise specified Symbol Min. Drain-source breakdown voltage BVDSS 100 Gate threshold voltage VGS(th) 1.0 Drain-source on-state resistance RDS(ON) Drain-source on-state resistance RDS(ON) Gate-source leakage current IGSS Drain-source leakage current IDSS Typ. Max. Unit Test condition V VGS=0V，ID=250uA 2.5 V VDS= VGS，ID=250uA 17 20 mΩ VGS=10V，ID=8A 12 26 mΩ VGS=4.5V，ID=6A 100 -100 nA 1 uA Max. Unit VGS=20V VGS=-20V VDS=100V，VGS=0V Dynamic Characteristics Parameter Symbol Min. Typ. Input capacitance Ciss 1190.6 pF Output capacitance Coss 194.6 pF Reverse transfer capacitance Crss 4.1 pF Td(on) 17.8 nS tr 3.9 nS Td(off) 33.5 nS tf 3.2 nS Turn-on delay time Rise time Turn-off delay time Fall time Test condition VGS=0V， VDS=50V， f=1MHz VGS=10V， VDS=50V， RG=2.2Ω， ID=10A Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Total gate charge Qg 19.8 nC Gate-source charge Qgs 2.4 nC Gate-drain charge Qgd 5.3 nC Vplateau 3.2 V Gate plateau voltage LPN2010C_EN_DS_Rev.1.0 www.chip-hope.com Test condition ID=8A， VDS=50V， VGS=10V SHENZHEN Chip Hope Micro-electronics LTD Confidential– Customer Use Only LPN2010C Enhancement Mode N-Channel Power MOSFET Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Diode forward current IS 50 A Pulsed source current ISP 140 A Diode forward voltage VSD 1.3 V Reverse recovery time trr 50.2 nS Reverse recovery charge Qrr 95.1 nC Peak reverse recovery current Irrm 2.5 A Test condition VGS