1N4148WT

1N4148WT Silicon Epitaxial Planar Switching Diode PINNING DESCRIPTION PIN Cathode 1 2 Features • Fast switching speed • Ultra-small surface mount package • For general purpose switching applications • High conductance Anode   1     2         Top View Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V IF(AV) 125 mA IFM 250 Average Rectified Forward Current Forward Continuous Current mA   IFSM 2 1 Power Dissipation Ptot 150 Thermal Resistance Junction to Ambient Air RèJA 833 Tj - 65 to + 150 O Tstg - 65 to + 150 O Non-repetitive Peak Forward Surge Current at t = 1 µs at t = 100 ms Operating Temperature Range Storage Temperature Range Characteristics at Ta = 25 OC Parameter Symbol Reverse Breakdown Voltage at IR = 1 µA V(BR)R Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Peak Reverse Current at VR = 75 V at VR = 20 V at VR = 75 V, TJ = 150 OC at VR = 25 V, TJ = 150 OC   VF     IR   Min. 75 - Total Capacitance at VR = 0 V, f = 1 MHz CT - Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 Ω trr - 1 of 3           A mW C/W O C C Max. Unit - V 0.715 0.855 1 1.25   V   1 25 50 30 µA nA µA µA 2 pF 4 ns 1N4148WT   2 of 3   1N4148WT PACKAGE OUTLINE SOD-523 Plastic surface mounted package; 2 leads           ∠                           A       C           HE D A                   bp   E                             ALL ROUND                           UNIT mm   A 0.70 0.60 bp 0.4 0.3 C D 0.135 0.100 1.25 1.15 3 of 3 E 0.85 0.75 HE 1.7 1.5 ∠ V 0.1   5 O