HX3400(5.8A)

SOT-23-3 Plastic-Encapsulate Transistors HX3400 MOSFET(N-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mout Package MARKING: XORB MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 30 V VGS Gate-Source voltage ±12 V ID Drain current 5.8 A PD Power Dissipation 1.4 W Tj Junction Temperature -55-150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=250 uA 0.7 Gate-body Leakage IGSS VDS=0V, VGS=±12V Zero Gate Voltage Drain Current IDSS Drain-Source On-Resistance RDS(ON) Forward Trans conductance gfs TYP MAX UNIT V 1.0 VDS=30V, VGS=0V 1.4 V ±100 nA 1 uA VGS=2.5V, ID=4A 43 54 mΩ VGS=4.5V, ID=5A 28 35 mΩ 24 39 mΩ VGS=10V, ID=5.8A VDS=5V, ID =5A 10 s Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 823 VDS=15V, VGS=0V, f=1MHz pF 99 77 Switching Capacitance Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=15V, ID=2.9A, VGS=10V RGEN=3Ω RGEN=2.7Ω VDS=15V, ID=5.8A, VGS=4.5V, 3.3 nS 4.8 nS 26 nS 4 nS 9.5 nC 1.5 nC 3 nC Drain-Source Diode Characteristics Diode Forward Voltage VSD Diode Forward Current Is VGS=0V, ID=1A 0.71 1.0 V 2.5 A 1