HX2300(2.5A)

HX 2300N-Channel 20-V(D-S) MOSFET Description The 2300 designed by t he trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Schematic diagram Features ♦ Ron(typ.)=25 mΩ @VGS=2.5V 2300 ♦ Ron(typ.)=21 mΩ @VGS=4.5V ♦ Low On-Resistance ♦ 150°C Operating Temperature ♦ Fast Switching ♦ Lead-Free, RoHS Compliant Marking and pin Assignment Application ●Battery protection ●Load switch ●Power management Symbol Parameter Rating Unit ±12 V 20 V 150 °C -50 to 155 °C Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS Drain-Source Breakdown Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current ① TC =25°C 5.2 TC =25°C 20 TC =25°C 5.2 A Mounted on Large Heat Sink IDM ID Pulse Drain Current Tested 1 ① Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation Rθ JA Thermal Resistance Junction-Ambient Vanguard Semiconductor Co., Ltd A A TC =100°C 4.0 TC =25°C 1.25 W 135 °C/W Page 1 Page 1 , Total 4 www.vgsemi.com HX 2300N-Channel 20-V(D-S) MOSFET Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) V(BR)DSS VGS=0V ID=250μA 20 -- -- V VDS=20V,VGS=0V -- -- 1 μA VDS=20V,VGS=0V -- -- 100 μA Gate-Body Leakage Current VGS=±12V,VDS=0V -- -- ±100 nA Gate Threshold Voltage VDS=VGS,ID=250μA 0.5 0.7 1.5 V RDS(ON) Drain-Source On-State Resistance VGS=2.5V,ID=5.2A -- 25 35 mΩ RDS(ON) Drain-Source On-State Resistance VGS=4.5V, ID=6A -- 21 25 mΩ -- 630 -- pF -- 150 -- pF Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS (Tc=25℃) Zero Gate Voltage Drain Current (Tc=125℃) IGSS VGS(TH) mΩ Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance -- 60 -- pF Qg Total Gate Charge -- 11 -- nC Qgs Gate-Source Charge -- 1.6 -- nC Qgd Gate-Drain Charge -- 2.7 -- nC -- 14.5 -- nS -- 46 -- nS -- 52 -- nS -- 39 -- nS -- -- -- -- -- 0.85 VDS=10V,VGS=0V, f=1MHz VDS=10V,ID=2.8A, VGS=4.5V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time t d(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD=10V, ID=1A, RG=6Ω, VGS=4.5V, RL=5Ω, Source- Drain Diode Characteristics ISD ISDM VSD Source-drain current(Body Diode) Pulsed Source-drain current Tc=25℃ (Body Diode) Forward on voltage Tj=25℃,ISD=2.8A, VGS=0V ① A 20 ① A 1.3 V 5.2 Page 2 HX 2300N-Channel 20-V(D-S) MOSFET On Resistance（mΩ） ID, Drain-Source Current (A) Typical Characteristics Fig1. Typical Output Characteristics Fig2. Typical Transfer Characteristics Normalized On Resistance VGS, Gate -Source Voltage (V) IS, Source-Drain Current (A) VDS, Drain -Source Voltage (V) Tj=150°C Tj=25°C VSD, Source-Drain Voltage (V) Fig4. Normalized On-Resistance Vs. Temperature VGS, -Gate-Source Voltage (V) VGS(TH), Gate -Source Voltage (V) Fig7. Typical Source-Drain Diode Forward Voltage Tj - Junction Temperature (°C) Qg -Total Gate Charge (nC) Fig5. Typical Gate Charge Vs.Gate-Source Voltage Tj - Junction Temperature (°C) Fig6. Threshold Voltage Vs. Temperature Page 3