HX4407

4407 P-Channel Enhancement-Mode MOSFET (-30V, -12A) PRODUCT SUMMARY VDSS ID -30V -12A RDS(on) (m-ohm) Max 13 @ VGS = -20V ,ID=-10A 20 @ VGS = -10V ,ID=-10A 28 @ VGS = -5V ,ID=-10A Features · Advanced Trench Process Technology · High Density Cell Design for Ultra Low On-Resistance · Lead free product is acquired · Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage o ID Drain Current @TA=25 C a IDM Drain Current (Pulsed) IAR Avalanche Current EAR Repetitive Avalanche Energy L=0.3mH PD IS Tj, Tstg RqJA Ratings Units -30 V ±20 V -10 A -60 A 30 A 135 mJ o 3 o Total Power Dissipation @TA=75 C 2.1 Maximum Diode Forward Current -2.1 A -55 to +150 °C 50 °C/W Total Power Dissipation @TA=25 C Operating Junction and Storage Temperature Range b Thermal Resistance Junction to Ambient (PCB mounted) a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in2 2oz Cu PCB board 1 W 4407 Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit VGS=0V, ID=-250uA -30 - - V VDS=-24V, VGS=0V - - -1 VGS=±25V, VDS=0V - - ±100 · Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current · On Characteristics uA nA c VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1.0 - -3.0 IDS(on) On State Drain Current VDS=-5V, VGS=-10V 60 - - A RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-10A - - 14 mW VGS=-4.5V, ID=-6A - - 20 VDS=-10V, ID=-5A - 26 - - 2076 2500 - 503 - - 302 423 1 2 3 - 37.2 - - 7 - gFS Forward Transconductance · Dynamic Characteristics V S d Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS=-15V, VGS=0V, f=1MHz VDS=0V, VGS=0V, f=1MHz pF W · Switching Characteristicsd Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge - 10.4 - td(on) Turn-on Delay Time - 12.4 - tr Turn-on Rise Time VDD=-15V, RL=1.25W, - 8.2 - td(off) Turn-off Delay Time VGS=-10V, RG=3W - 25.6 - - 12 - - 33 40 nS - 23 - nC - - -1 V - - -4.2 A tf Turn-off Fall Time trr Reverse Recovery Time Qrr Reverse Recovery Charge VDS=-15V, ID=-12A, VGS=-10V IDS=-12A, dI/ dt=100A/ uS nC nS · Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage IS Drain-Source Diode Forward Current VGS=0V, IS=-1A Note: Pulse Test: Pulse Width £300us, Duty Cycle£2% 2 4407 Characteristics Curve 3 4407 Characteristics Curve 4