ME2805A293M3G

ME2805 Ultra-small package High-precision Voltage Detector with delay circuit, ME2805 Series General Description Features ME2805 Series is a series of high-precision  Highly accuracy： ±1% voltage detectors with a built-in delay time generator  Low power consumption：TYP 0.9uA (VDD=3V) of fixed time developed using CMOS process.  Detect Internal oscillator and counter timer can delay the release signal without external parts. Detect voltage is extremely accurate with minimal temperature drift. CMOS output configurations are available.  range ： 1.0V~6.5V  Operating voltage range：0.7V~7V  Detect voltage temperature characteristics： TYP±100ppm/℃ Output configuration： CMOS Package Power monitor for portable equipment such ● 3-pin SOT23-3、SOT23 as notebook computers, digital still cameras, PDA, and cellular phones  Constant voltage power monitor for cameras, video equipment and communication devices.  Typical Application Circuit Power monitor for microcomputers and reset for CPUs.  System battery life and charge voltage monitors V04 in increments  Typical Application voltage www.microne.com.cn Page 1 of 11 0.1V ME2805 Selection Guide ME 2805X X X X X G Environment mark Package: M3-SOT23-3 X-SOT23 Output Voltage Function Product Type Product Series Microne product series ME2805A263M3G ME2805A263XG ME2805A293M3G NOTE: V04 product description VOUT =2.63V；Rising edge detection；Package：SOT23-3 VOUT =2.63V；Rising edge detection；Package：SOT23 VOUT =2.93V；Rising edge detection；Package：SOT23-3 ME2805A293XG VOUT =2.93V；Rising edge detection；Package：SOT23 ME2805A308XG VOUT =3.08V；Rising edge detection；Package：SOT23 ME2805A463XG VOUT =4.63V；Rising edge detection；Package：SOT23 If you need other voltage and package, please contact our sales staff. www.microne.com.cn Page 2 of 11 ME2805 Pin Configuration 1 3 3 2 1 SOT-23 2 SOT-23-3 Pin Assignment PIN Number Pin Name Function 1 VSS Ground 2 VOUT 3 VDD SOT-23-3/SOT-23 Output Voltage Input Voltage Block Diagram Absolute Maximum Ratings PARAMETER SYMBAL RATINGS UNITS VIN Input Voltage VIN 8 V Output Current IOUT 50 mA VOUT GND-0.3~VIN+0.3 V Output Voltage CMOS Continuous Total Power Dissipation SOT-23-3 SOT-23 Pd 300 mW 250 Operating Ambient Temperature TOpr -40~+85 ℃ Storage Temperature Tstg -40~+125 ℃ Soldering temperature and time Tsolder 260℃, 10s MM 400 V HBM 4000 V ESD V04 www.microne.com.cn Page 3 of 11 ME2805 Electrical Characteristics (-VDET(S)=1.0V to 6.5V±2% ,Ta=25OC , unless otherwise noted) Parameter Detect Voltage (Output Voltage) Hysteresis Range Conditions Min. Typ Max. Units -VDET - -VDET（S） ×0.99 -VDET(S) -VDET(S) ×1.01 V 0.03 0.06 0.1 V VDD=3V (below 2.5V) - 0.9 1.5 VDD=5V (2.5V-4.5V) - 1.4 2.8 VDD=7V (4.5V-6.5V) - 1.8 3.6 VDS=0.5V VDD=0.7V 0.01 0.19 -- Iout P-ch VDS=0.5V VDD=7V 1.7 3.4 -- VDD - 0.7 - 7 V 1 Td1 VDD=-VDET+1V DS low 130 200 290 ms 1 Td2 VDD=-VDET+1V DS high 110 220 330 us 5   VDET Ta  VDET Ta =-40℃ ~ 85℃ - ±350 ppm/℃ 1 VHYS ISS Supply Current Iout N-ch Output Current Operating voltage Delay time Temperature characteristics - ±100 1 uA mA mA Note： 1、-VDET(S) ：Specified Detection Voltage value 2、-VDET ：Actual Detection Voltage value 3、Release Voltage：+VDET=-VDET+VHYS Test Circuits: 1. V04 Test circuit Symbol 2. www.microne.com.cn Page 4 of 11 2 3 4 ME2805 3. 4. 5. Functional Description： 1. Basic Operation: CMOS Output (Active Low) 1-1. When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the Nch transistor N1 in Figure 1 is OFF, the ( RB  RC )  VDD R A  RB  RC . comparator input voltage is 1-2. When the VDD goes below +VDET, the output provides the VDD level, as long as VDD remains above the detection voltage (–VDET). When the VDD falls below –VDET (point A in Figure 2), the Nch transistor becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the output. At this time the Nch RB  VDD R  RB . transistor N1 in Figure 1 becomes ON, the comparator input voltage is changed to A 1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to VDD when the output is pulled up to VDD. 1-4. The VSS level appears when VDD rises above the minimum operating voltage. The VSS level still appears even when VDD surpasses the –VDET, as long as it does not exceed the release voltage +VDET. 1-5. When VDD rises above +VDET (point B in Figure 2), the Nch transistor becomes OFF and the Pch transistor becomes ON to provide VDD at the output. The VDD at the OUT pin is delayed for Td due to the delay circuit. V04 www.microne.com.cn Page 5 of 11 ME2805 2. Delay Circuit 2-1. Delay Time The delay circuit delays the output signal from the time at which the power voltage (VDD) exceeds the release voltage (+VDET) when VDD is turned on. The output signal is not delayed when the VDD goes below the detection voltage (–VDET). (Refer to Figure 2.) The delay time (tD) is a fixed value that is determined by a built-in oscillation circuit and counter. 2-2. DS Pin (ON/OFF Switch Pin for Delay Time) The DS pin should be connected to Low or High. When the DS pin is High, the output delay time becomes short since the output signal is taken from the middle of counter circuit (Refer to Figure 3). V04 www.microne.com.cn Page 6 of 11 ME2805 Directions for use： 1、 Please use this IC within the stated maximum ratings. Operation beyond these limits may cause degrading or permanent damage to the device. 2、When a resistor is connected between the VDD pin and the input with CMOS output configurations, oscillation may occur as a result of voltage drops at RIN if load current(IOUT) exists.(refer to the Oscillation Description(1) below) 3、When a resistor is connected between the VDD pin and the input with CMOS output configurations, oscillation may occur as a result of through current at the time of voltage release even if load current(IOUT) does not exist. (refer to the Oscillation Description(2) below) 4、With a resistor connected between the VDD and the input, detect and release voltage will rise as a result of the IC’s supply current flowing through the VDD pin. 5、In order to stabilize the IC’s operations, please ensure that VDD pin’s input frequency’s rise and fall times are more than several u Sec/V. Oscillation Description： 1、 Output current oscillation with the CMOS output configuration When the voltage applied at IN rises, release operations commence and the detector’s output voltage increase. Load current(IOUT) will flow at RL. Because a voltage drop(RIN*IOUT) is produces at the RIN resistor, located between the input(IN) and the VDD pin. The load current will flow via the IC’s pin. The voltage drop will also lead to a fall in the voltage level at the VDD pin. When the VDD pin voltage level falls below the detect voltage level, detect operations will commence. Fllowing detect operations, load current flow will cease and since voltage drop at R IN will disapper, the voltage level at the VDD pin will rise and release operations will begin over again. Oscillation may occur with this “release-detect-release” repetition. Further, this condition will also appear via means of a similar mechanism during detect operations. 2、 Oscillation as a result of through current Since the ME2805 series are CMOS IC’s, through current will flow when the IC’s internal circuit switching operates(during release and detect operations). Consequently, oscillation is liable to occur as a result of drops in voltage at the through current’s resistor(RIN) during release voltage operations.(refer to diagram 2) since hysteresis exists during detect operations, oscillation is unlikely to occur. V04 www.microne.com.cn Page 7 of 11 ME2805 Type Characteristics 1、SUPPLY CURRENT VS. AMBIENT TEMPERATURE VDD=5V,-VDET=2.63V VDD=2.5V,-VDET=2.63V Iss VS.TEMP 1.2 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 1 Iss(uA) Iss(uA) Iss VS.TEMP 0.8 0.6 0.4 0.2 0 -16 10 20 30 40 50 60 70 80 90 100 110 120 -16 10 20 30 40 50 TEMP(℃) 2 、 SUPPLY CURRENT VS. INPUT VOLTAGE -VDET=2.63V （T=25℃） VDET(V) Iss(uA) 2 1.5 1 0.5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 2.72 2.7 2.68 2.66 2.64 2.62 2.6 2.58 2.56 2.54 -16 10 20 30 40 50 Iout(mA) 10 Iout(mA) T=-15℃ T=23℃ T=85℃ 6 4 2 0 1 1.2 1.7 2.2 2.5 VDD(V) V04 80 90 100 110 120 I o u t ( P ) VS . VD D 12 0.7 70 P-ch VDS=0.5V,-VDET=2.63V Iout(N) VS. VDD 0.5 60 TEMP(℃) 4、 OUTPUT CURRENT VS. INPUT VOLTAGE N-ch VDS=0.5V,-VDET=2.63V 0.2 90 100 110 120 +VDET -VDET VDD(V) 8 80 VDET VS TEMP 2.5 0.5 70 3 、 DETECT,RELEASE VOLTAGE VS. AMBIENT TEMPERATURE -VDET=2.63V Iss VS VDD 0 60 TEMP(℃) 4 3.5 3 2.5 2 1.5 1 0.5 0 2.7 T = 8℃ 5 3.2 3.5 T = 2℃ 3 4 T = - 1℃5 4.5 5 5.5 VD D ( V) www.microne.com.cn Page 8 of 11 6 ME2805 Packaging Information ● SOT23 DIM A A1 A2 b c D e1 E E1 e L L1 θ c1 V04 Millimeters Min 0.9 0 0.9 0.28 0.07 2.8 1.8 1.2 2.2 Inches Max 1.2 0.14 1.05 0.52 0.23 3.0 2.0 1.4 2.6 Min 0.0354 0.0000 0.0354 0.0110 0.0028 0.1102 0.0709 0.0472 0.0866 0.95(TYP) 0.55(TYP) 0.25 0 Max 0.0472 0.0055 0.0413 0.0205 0.0091 0.1181 0.0787 0.0551 0.1024 0.0374(TYP) 0.0217(TYP) 0.55 8° 0.25(TYP) www.microne.com.cn 0.0098 0.0000 0.0217 8° 0.0098(TYP) Page 9 of 11 ME2805 ● SOT23-3 DIM A A1 A2 b c D e1 E E1 e L L1 θ c1 V04 Millimeters Min 0.9 0 0.9 0.28 0.07 2.8 1.8 1.2 2.2 Inches Max 1.2 0.14 1.05 0.52 0.23 3.0 2.0 1.4 2.6 Min 0.0354 0.0000 0.0354 0.0110 0.0028 0.1102 0.0709 0.0472 0.0866 0.95(TYP) 0.55(TYP) 0.25 0 Max 0.0472 0.0055 0.0413 0.0205 0.0091 0.1181 0.0787 0.0551 0.1024 0.0374(TYP) 0.0217(TYP) 0.55 8° 0.25(TYP) www.microne.com.cn 0.0098 0.0000 0.0217 8° 0.0098(TYP) Page 10 of 11 ME2805      The information described herein is subject to change without notice. Nanjing Micro One Electronics Inc is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Nanjing Micro One Electronics Inc is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Nanjing Micro One Electronics Inc. Although Nanjing Micro One Electronics Inc exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. V04 www.microne.com.cn Page 11 of 11