MEM2306SG

MEM2306 N-Channel MOSFET MEM2306 General Description Features MEM2306SG Series Dual N-channel enhancement  20V/5A， RDS(ON) =29mΩ@ VGS=3.85V,ID=5A mode field-effect transistor produced with high cell density DMOS trench technology, which is especially  High Density Cell Design For Ultra Low On-Resistance used to minimize on-state resistance. This device  surface mount package：SOP8 particularly suits low voltage applications, and low power dissipation. Pin Configuration Typical Application  Battery management  power management  Portable equipment  Low power DC to DC converter.  Load switch  LCD adapter Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V ID 5 A IDM 30 A Drain Current Pulsed Drain Current Total Power Dissipation V7.0 TA=25℃ 1,2 TA=25℃ TA=70℃ PD 1.3 1.0 W Operating Temperature Range TOpr 150 ℃ Storage Temperature Range Tstg －65/150 ℃ www.microne.com.cn 1 MEM2306 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient3 Symbol Ratings Unit RθJA 62.5 ℃/W Steady-State Electrical Characteristics Parameter Symbol Test Condition Min Type Max Unit Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250μA 20 23 Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 0.5 0.72 1 V Gate-Body Leakage IGSS VDS=0V，VGS=12V 5 100 nA VDS=0V，VGS=-12V -7 -100 nA Zero Gate Voltage Drain Current IDSS VDS=16V VGS=0V 1.8 1000 nA VGS=4.5V,ID=6A 23 mΩ VGS=3.85V,ID=5A 25 mΩ VGS=2.5V,ID=4A 35 mΩ Static Drain-Source On-Resistance RDS(ON) Forward Transconductance gFS VDS =10 V, ID = 6A Source-drain (diode forward) voltage VSD VGS=0V,IS=1.5A 6 V 20 S 0.8 1 1120 1500 480 630 110 160 25 60 60 140 60 140 50 60 47 60 V Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 8 V, VGS = 0 V, f = 1 MHz pF Switching Characteristics Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall-Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd V7.0 VDD = 10 V, RL = 10Ω ID =1 A, VGEN = 4.5 V, Rg = 6 Ω VDS = 10 V, VGS = 4.5 V, ID = 6 A www.microne.com.cn 6 ns nc 8 2 MEM2306 Typical Performance Characteristics： V7.0 www.microne.com.cn 3 MEM2306 V7.0 www.microne.com.cn 4 MEM2306 V7.0 www.microne.com.cn 5 MEM2306 Package Information： V7.0 www.microne.com.cn 6 MEM2306      V7.0 The information described herein is subject to change without notice. Nanjing Micro One Electronics Inc is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Nanjing Micro One Electronics Inc is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Nanjing Micro One Electronics Inc. Although Nanjing Micro One Electronics Inc exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. www.microne.com.cn 7