MEM2309SG

MEM2309 P-Channel MOSFET MEM2309S Description： Feature：  MEM2309SG Series P-channel enhancement RDS(ON) =53mΩ@ VGS=-10V,ID=-6A mode field-effect transistor ,produced with high RDS(ON) =68mΩ@ VGS=-4.5V,ID=-4A cell density DMOS trench technology, which is especially used to minimize -30V/-6A  on-state High Density Cell Design For Ultra Low On-Resistance resistance.  This device particularly suits low voltage Surface mount package:SOP8 applications, and low power dissipation. Pin Configuration： Typical Application:    Power management Load switch Battery protection Absolute Maximum Ratings: Parameter Symbol Ratings Unit Drain-Source Voltage VDSS -30V V Gate-Source Voltage VGSS V TOpr ±20 -6 -3.2 -30 2 0.8 150 ℃ Tstg -65/150 ℃ Drain Current TA=25℃ TA=70℃ Pulsed Drain Current1,2 TA=25℃ Total Power Dissipation TA=70℃ Operating Temperature Range Storage Temperature Range V6.0 www.microne.com.cn ID IDM Pd A A W 1 MEM2309 Thermal Characteristics: Parameter 3 Thermal Resistance, Junction-to-Ambient Symbol Ratings Unit RθJA 50 ℃/W Electrical Characteristics: MEM2309SG Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Forward Transconductance Drain-Source Diode Forward Current Source-drain (diode forward) voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol Test Condition Static Characteristics VGS=0V, V(BR)DSS ID=-250uA VDS= VGS, VGS(th) ID=-250uA VDS=0V，VGS=20V IGSS VDS=0V，VGS=-20V IDSS VDS=-24V VGS=0V Min Type Max Unit -30 -34 -1.1 -1.3 -2 V 5 -5 -6 30 -30 -300 nA nA nA V RDS(ON)1 VGS=-10V,ID=-6A 33 53 65 mΩ RDS(ON)2 VGS=-4.5V,ID=-4A 50 68 80 mΩ gFS VDS = –5 V, ID = –5.3 A 10 IS VSD VGS=0V,IS=-1A Dynamic Characteristics Ciss VDS = -15V, Coss VGS = 0 V, f = 1 MHz Crss Switching Characteristics td(on) VDD = -15 V, tr ID=-1 A, VGEN = -10 V, td(off) Rg = 6 Ω tf Qg Qgs Qgd VDS = -15 V, VGS = -10 V, ID = -4A -0.8 S -2.1 A -1.2 V 530 140 70 8 15 15 10 10 pF 15 25 25 15 15 ns 2.2 2.0 nc 1、Repetitive rating, pulse width limited by junction temperature. 2、Pulse test; pulse width ≤300 us, duty cycle ≤2%. 3、Surface Mounted on FR4 Board, t ≤ 10 sec. V6.0 www.microne.com.cn 2 MEM2309 Typical Performance Characteristics： V6.0 www.microne.com.cn 3 MEM2309 V6.0 www.microne.com.cn 4 MEM2309 Package Information： V6.0 www.microne.com.cn 5 MEM2309 · The information described herein is subject to change without notice. · Nanjing Micro One Electronics Inc is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. · Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Nanjing Micro One Electronics Inc is strictly prohibited. · The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Nanjing Micro One Electronics Inc. · Although Nanjing Micro One Electronics Inc exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. V6.0 www.microne.com.cn 6