WSF40N06
N-Ch MOSFET
General Description
Product Summery
The WSF40N06 is the highest performance trench
N-Ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
BVDSS
RDSON
ID
60V
20mΩ
50A
Applications
The WSF40N06 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z LCD/LED back light
Features
TO-252 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
1
Continuous Drain Current, VGS @ 10V
50
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
32
A
1
10
A
1
8
A
200
A
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
EAS
Single Pulse Avalanche Energy
42
mJ
IAS
Avalanche Current
PD@TC=25℃
28
A
4
53
W
4
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
3.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Typ.
RθJA
Thermal Resistance Junction-Ambient
RθJC
1
www.winsok.tw
Thermal Resistance Junction-Case
Page 1
1
Max.
Unit
---
62
℃/W
---
2
℃/W
Dec.2014
WSF40N06
N-Ch MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance2
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
60
---
---
V
Reference to 25℃ , ID=1mA
---
0.057
---
V/℃
VGS=10V , ID=20A
---
20
23
VGS=4.5V , ID=10A
---
23
28
mΩ
1.2
1.8
2.5
V
---
-5.68
---
mV/℃
VDS=48V , VGS=0V , TJ=25℃
---
---
1
VDS=48V , VGS=0V , TJ=55℃
---
---
5
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=15A
---
9
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.7
3.4
Ω
Qg
Total Gate Charge (4.5V)
---
28
36
Qgs
Gate-Source Charge
---
3.5
10
Qgd
Gate-Drain Charge
---
6.5
15
VGS(th)
Gate Threshold Voltage
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
VGS=VDS , ID =250uA
VDS=30V , VGS=4.5V , ID=15A
uA
nC
---
7.2
14.4
Rise Time
VDD=30V , VGS=10V , RG=3.3Ω,
---
38
90
Turn-Off Delay Time
ID=15A
---
34
73
Fall Time
---
8.2
15.2
Ciss
Input Capacitance
---
1680
2578
Coss
Output Capacitance
---
115
203
Crss
Reverse Transfer Capacitance
---
85
136
Min.
Typ.
Max.
Unit
19
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
50
A
---
---
200
A
---
---
1
V
---
19.6
---
nS
---
nC
Td(on)
Tr
Td(off)
Tf
Turn-On Delay Time
VDS=15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=25V , L=0.1mH , IAS=15A
Diode Characteristics
Symbol
IS
ISM
Parameter
Conditions
1,6
Continuous Source Current
2,6
Pulsed Source Current
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=1A ,dI/dt=100A/µs,TJ=25℃
---
14.2
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t
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