S9013

东莞市通科电子有限公司 1H1 – 1H8 S9013 DongGuan Tongke Electronic Co.,LTD S9013 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage = IC=0.1mA, IE 0 V(BR)CBO 40 V Collector-emitter breakdown voltage = IC=1mA, IB 0 V(BR)CEO 25 V Emitter-base breakdown voltage = IE=0.1mA, IC 0 V(BR)EBO 5 V Collector cut-off current Collector cut-off current Emitter cut-off current = VCB=40V, IE 0 ICBO 0.1 uA = VCE=20V, IB 0 ICEO 0.1 uA 0.1 uA = VEB=5V, IC 0 IEBO DC current gain hFE(1) VCE=1V, = IC 50mA 120 hFE(2) VCE = =1V, IC 500mA 40 400 Collector-emitter saturation voltage VCE(sat) IC=500mA, = IB 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500mA, = IB 50mA 1.2 V VCB=1V,IC= 10mA, 0.7 V Base-emitter voltage VBE Transition frequency fT Cob Collector output capacitance VCE=6V,IC=20mA, f=30MHz VCB=6V, IE=0, f=1MHz 150 MHz 8 pF CLASSIFICATION OF hFE(1) S9013 RANK L H J RANGE 120-200 200-350 300-400 1 of 4 www.tongke888.com 400-6922-883 东莞市通科电子有限公司 1H1 – 1H8 S9013 DongGuan Tongke Electronic Co.,LTD Static Characteristic 100 IC hFE Ta=100℃ DC CURRENT GAIN 300uA 60 —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 350uA IC (mA) 80 hFE 1000 400uA COLLECTOR CURRENT SOT-23 Plastic-Encapsulate Transistors 250uA 200uA 40 150uA Ta=25℃ 100 100uA 20 IB=50uA 0 10 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat 500 —— VCE 20 1 3 10 IC VBEsat 1.2 500 100 30 COLLECTOR CURRENT (V) IC (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 100 Ta=100℃ Ta=25℃ 30 Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 β=10 10 1 10 3 COLLECTOR CURRENT 1 3 30 10 (mA) 100 COLLECTOR CURRENT —— VBE IC 100 IC 0.0 500 100 30 Cob/ Cib 100 —— IC VCB/ VEB f=1MHz IE=0/ IC=0 30 Ta=25℃ Cib 30 C (pF) Ta=100℃ 10 CAPACITANCE IC (mA) COMMON EMITTER VCE=1V COLLECTOR CURRENT 500 (mA) 3 Ta=25℃ 1 Cob 10 3 0.3 0.1 0.0 0.2 0.4 0.6 0.8 1 0.1 1.0 fT 1000 1 0.3 —— IC PC —— 400 10 3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) V 20 (V) Ta VCE=6V COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) Ta=25℃ 300 100 10 10 200 100 0 100 30 COLLECTOR CURRENT S9013 300 IC (mA) 0 25 50 75 AMBIENT TEMPERATURE 2 of 4 100 Ta 125 150 (℃ ) www.tongke888.com 400-6922-883 东莞市通科电子有限公司 DongGuan Tongke Electronic Co.,LTD Symbol A A1 A2 b c D E E1 e e1 L L1 θ 1H1 – 1H8 S9013 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout S9013 3 of 4 www.tongke888.com 400-6922-883 东莞市通科电子有限公司 DongGuan Tongke Electronic Co.,LTD S9013 4 of 4 1H1 – 1H8 S9013 SOD-23 Plastic-Encapsulate Transistors SOT-23 www.tongke888.com 400-6922-883