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S8050

S8050

  • 厂商:

    TK(通科)

  • 封装:

    SOT-23

  • 描述:

    通用三极管 NPN Ic=500mA Vceo=25V hfe=120~400 fT=150MHz P=300mW

  • 数据手册
  • 价格&库存
S8050 数据手册
东莞市通科电子有限公司 S8050 DongGuan Tongke Electronic Co.,LTD TRANSISTOR (NPN) SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES z Complimentary to S8550 Collector Current: IC=0.5A z 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 417 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit 40 V IC=1mA, IB 0 V(BR)CEO = 25 V V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO V= CB=40 V , IE 0 0.1 μA Collector cut-off current ICEO = VCB= 20V , I E 0 0.1 μA Emitter cut-off current IEBO = VEB= 5V , IC 0 0.1 μA hFE(1) VCE= 1V, I C= 50mA 120 hFE(2) VCE= 1V, I C= 500mA 50 Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain IC= 100μA, IE=0 400 Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V fT Transition frequency VCE= 6V, I C= 20mA f=30MHz 150 MHz CLASSIFICATION OF hFE(1) Rank Range www.cj-elec.com L H J 120-200 200-350 300-400 1 www.tongke888.com A,Jun,2014 400-6922-883 S8050 Typical Characteristics Static Characteristic 100 hFE DC CURRENT GAIN COLLECTOR CURRENT 60 IC Ta=100℃ 300uA IC (mA) 350uA —— COMMON EMITTER VCE=1V COMMON EMITTER Ta=25℃ 400uA 80 hFE 1000 250uA 200uA 40 150uA Ta=25℃ 100 100uA 20 IB=50uA 0 10 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat 500 —— VCE 20 1 3 10 IC VBEsat 1.2 500 100 30 COLLECTOR CURRENT (V) IC (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 100 Ta=100℃ Ta=25℃ 30 Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 β=10 10 1 10 3 COLLECTOR CURRENT IC 500 IC 0.0 500 100 30 1 3 30 10 (mA) 100 COLLECTOR CURRENT —— VBE Cob/ Cib 100 —— IC VCB/ VEB f=1MHz IE=0/ IC=0 100 Ta=25℃ Cib (pF) 30 30 C Ta=25℃ 10 CAPACITANCE IC (mA) COMMON EMITTER VCE=1V COLLECTOR CURRENT 500 (mA) Ta=100℃ 3 1 Cob 10 3 0.3 0.1 0.2 0.4 0.6 0.8 1 0.1 1.0 fT 1000 —— IC PC —— 400 10 3 REVERSE VOLTAGE V 20 (V) Ta VCE=6V COLLECTOR POWER DISSIPATION PC (mW) (MHz) Ta=25℃ fT TRANSITION FREQUENCY 1 0.3 BASE-EMMITER VOLTAGE VBE (V) 100 10 10 200 100 0 100 30 COLLECTOR CURRENT www.cj-elec.com 300 IC 0 (mA) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta www.tongke888.com 125 150 (℃ ) A,Jun,2014 400-6922-883 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 3 www.tongke888.com 400-6922-883
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