UFS08A2.8L04

UFS08A2.8L04 Electrostatic Discharged Protection Devices (ESD) Data Sheet Description Brightking’s UFS08A2.8L04 component is designed to protect low voltage state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The device provides low stand-off voltages with significant reductions in leakage currents and capacitance over silicon avalanche diode processes. The UFS08A2.8L04 features integrated low capacitance compensation diodes that reduce the typical capacitance 5pF per line. This combined with low leakage current, means signal integrity preserved in high-speed applications such as 10/100/1000 Ethernet. Features ● ● ● ● ● ● ● ● ● ● ● ● ● IEC61000-4-2 ESD 15KV Air, 8KV contact compliance SOIC-08 surface mount package Protects four I/O lines Peak power dissipation of 600W under 8/20μs waveform Working voltage: 2.8V Low leakage current Low operating and clamping voltages Solid-state silicon avalanche technology Lead Free/RoHS compliant Solder reflow temperature: Pure Tin-Sn, 260~270℃ Flammability rating UL 94V-0 Meets MSL level 1, per J-STD-020 Marking: B SLVU2.8-4 Pin Configuration Applications ● ● ● ● 10/100/1000 Ethernet WAN/LAN Equipment High current switching systems Desktops, Servers and Notebook ● Instrumentation ● Analog inputs ● Base stations Maximum Ratings Rating Peak pulse power (tp=8/20μs waveform) ESD voltage (Contact discharge) ESD voltage (Air discharge) Storage & operating temperature range Revision：10-Jun-15 Symbol Value Unit PPP 600 W VESD TSTG ,TJ ±8 ±15 -55~+150 kV ℃ www.brightking.com UFS08A2.8L04 Electrical Characteristics (TJ=25℃) Parameter Reverse stand-off voltage Reverse breakdown voltage Symbol Condition Min. VRWM Max. Unit 2.8 V VBR IBR=1mA Reverse leakage current IR VR=2.8V Each I/O pin 5 μA Clamping voltage (tp=8/20μs) VC IPP=5A 8.5 V Peak pulse current (tp=8/20μs) IPP 24 A 0Vdc,f=1MHz Between I/O pins and GND 3 pF 0Vdc,f=1MHz Line to Line, two I/O pins connected together on each line (Note) 6 pF Off state junction capacitance CJ 3 V Note: Ratings with two pins connected together per the recommended configuration (ie pin 1 connected to pin 8, pin 2 connected to pin 7, pin 3 connected to pin 6, pin 4 connected to pin 5). Applications Information Revision：10-Jun-15 www.brightking.com UFS08A2.8L04 Typical Characteristics Curves Figure 2. Pulse Waveforms 110 100 Peak Power Dissipation (%) Figure 1. Power Derating Curve tr Peak value Ipp Waveform Parameters: tr=8µs td=20µs 90 80 70 60 50 40 30 td=t|IPP/2 20 10 0 0 5 10 15 20 25 30 t-Time (μs) Figure 4. Capacitance vs. Reverse Voltage Junction Capacitance (pF) Figure 3. Non-Repetitive Peak Pulse vs. Pulse Time Figure 5. Clamping Voltage vs. Peak Pulse Current Revision：10-Jun-15 www.brightking.com UFS08A2.8L04 Recommended Soldering Conditions Reflow Soldering Recommended Conditions Profile Feature Pb-Free Assembly Average ramp-up rate (TL to TP) 3℃/second max. Preheat -Temperature Min (TS min) -Temperature Max (TS max) -Time (min to max) (ts) 150℃ 200℃ 60-180 seconds TS max to TL -Ramp-up Rate 3℃/second max. Time maintained above: -Temperature (TL) -Time (tL) 217℃ 60-150 seconds Peak Temperature (TP) 260℃ Time within 5℃ of actual Peak Temperature (tP) Ramp-down Rate Time 25℃ to Peak Temperature Revision：10-Jun-15 20-40 seconds 6℃/second max. 8 minutes max. www.brightking.com UFS08A2.8L04 Dimensions (SOIC-08) Dimension Symbol Millimeters Inches Min. Max. Min. Max. A 4.80 5.00 0.189 0.197 B 5.80 6.20 0.228 0.244 C 3.80 4.00 0.150 0.157 D 1.27 0.050 E 0.33 0.51 0.013 0.020 F 0.40 1.27 0.016 0.050 G 0.19 0.25 0.007 0.010 H 1.35 1.75 0.053 0.069 H1 0.10 0.25 0.004 0.010 H2 1.45 0.057 Packaging Tape Reel Symbol Dimension (mm) W 12.00±0.30 P0 4.00±0.10 P1 8.00±0.10 P2 2.00±0.10 D0 Φ1.55±0.10 D1 Φ1.55±0.05 E 1.75±0.10 F 5.50±0.10 A 6.50±0.10 B 5.40±0.10 K 2.00±0.10 t 0.30±0.05 D Φ330.0±3.0 D2 Φ13.0 W1 13.5 Quantity: 2500PCS Revision：10-Jun-15 www.brightking.com