DTS2319

DTS2319 www.din-tek.jp P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 6a 0.026 at VGS = - 2.5 V - 6a 0.065 at VGS = - 1.8 V -4 Qg (Typ.) 20 nC S • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Built in ESD Protection with Zener Diode • Typical ESD Performance: 1800 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Portable Devices - Load Switch - Battery Switch - Charger Switch G R D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation ID Operating Junction and Storage Temperature Range TJ, Tstg d, e V - 6a - 2.9b, c 19 12 IS PD Unit - 6a - 6a - 5b, c - 4.1b, c - 50 IDM Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature) Limit - 20 ± 12 3.5b, c 2.2b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, e Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 28 5.3 Maximum 36 6.5 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under Steady State conditions is 80 °C/W. 1 DTS2319 www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) IGSS Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current Drain-Source On-State Resistancea Forward Transconductancea IDSS ID(on) RDS(on) gfs ID = - 250 µA VDS = VGS, ID = - 250 µA V - 12 mV/°C 3 - 1.2 - 0.5 VDS = 0 V, VGS = ± 12 V ± 20 VDS = 0 V, VGS = ± 4.5 V ± 0.5 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V - 20 V µA A VGS = - 4.5 V, ID = - 5.6 A 0.015 0.018 VGS = - 2.5 V, ID = - 5.3 A 0.021 0.026 VGS = - 1.8 V, ID = - 2.5 A 0.040 0.065 VDS = - 10 V, ID = - 5.6 A 35 VDS = - 10 V, VGS = - 8 V, ID = - 5 A 50 75 20 30 Ω S Dynamicb Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A td(off) tf f = 1 MHz VDD = - 10 V, RL = 1 Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω td(on) tr td(off) tf nC 8.4 td(on) tr 3.3 VDD = - 10 V, RL = 1 Ω ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 0.2 1 2 0.71 1.1 1.7 2.6 6 9 3.2 5 0.3 0.45 0.6 0.9 10 15 3.5 5.5 kΩ us Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb -6 TC = 25 °C - 50 IS = - 5 A, VGS = 0 V IF = 6 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.85 - 1.2 V 30 60 ns 20 40 nC 13 17 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTS2319 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10-2 1.0 10-3 I GSS - Gate Current (A) I GSS - Gate Current (mA) 0.8 0.6 0.4 TJ = 25 °C 10-4 10-5 TJ = 150 °C 10-6 10-7 TJ = 25 °C 0.2 10-8 10-9 0.0 0 3 9 6 12 15 0 6 3 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 10 50 VGS = 5 V thru 3 V VGS = 2.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 40 30 VGS = 2 V 20 6 4 TC = 25 °C 2 10 TC = 125 °C VGS = 1.5 V 0 0.0 1.0 0.5 1.5 2.0 2.5 0 0.0 3.0 TC = - 55 °C 1.5 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 10 0.08 VGS - Gate-to-Source Voltage (V) 0.07 R DS(on) - On-Resistance (Ω) 1.0 0.5 VGS = 1.8 V 0.06 0.05 0.04 VGS = 2.5 V 0.03 0.02 0.01 ID = - 6 A 8 VDS = 10 V 6 VDS = 16 V VDS = 5 V 4 2 VGS = 4.5 V 0 0.00 0 10 20 30 40 ID - Drain Current (A) On-Resistance vs. Drain Current 50 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge 3 DTS2319 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 100 ID = - 5 . 6 A (Normalized) R DS(on) - On-Resistance I S - Source Current (A) VGS = 4.5 V 1.4 1.2 VGS = 2.5 V 1.0 10 TJ = 150 °C TJ = 25 °C 1 0.8 0.6 - 50 0 - 25 25 50 75 100 125 0.1 0.0 150 0.2 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 0.8 1.0 1.2 1.1 1.0 0.05 ID = - 5 . 6 A ; T J = 125 °C 0.9 ID = -2.5 A; TJ = 125 °C 0.04 VGS(th) (V) R DS(on) - On-Resistance (Ω) 0.6 Soure-Drain Diode Forward Voltage 0.06 0.03 0.4 VSD - Source-to-Drain Voltage (V) ID = -2.5 A; TJ = 25 °C 0.8 ID = 250 µA 0.7 ID = -5.6 A; TJ = 25 °C 0.02 0.6 0.01 0.5 0.4 - 50 0.00 0 1 2 3 4 5 - 25 0 VGS - Gate-to-Source Voltage (V) 25 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 100 30 Limited by RDS(on)* I D - Drain Current (A) 25 Power (W) 20 15 10 100 µs 10 1 ms 1 10 ms 100 ms 1 s, 10 s 0.1 5 TA = 25 °C Single Pulse DC BVDSS Limited 0 0.001 0.01 0.1 1 10 100 1000 Time (s) Single Pulse Power, Junction-to-Ambient 4 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient DTS2319 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 20 Power Dissipation (W) I D - Drain Current (A) 25 20 15 Package Limited 10 15 10 5 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5 DTS2319 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 10-1 Package Information www.din-tek.jp SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.95 BSC 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 1 Application Note www.din-tek.jp 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE  1 Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Din-Tek’s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. 1