FS8205

FS8205-DS-19_EN Datasheet AUG 2016 RT P r R ro U ef pe NE er rti ’ en es ce O nl y REV. 1.9 FS8205 Fo FO Dual N-Channel Enhancement Mode Power MOSFET FS8205 Fo FO RT P r R ro U ef pe NE er rti ’ en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司 23F.,No.29-5, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.：886-2-28094742 Fax：886-2-28094874 www.ic-fortune.com This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent accompany the sale of the product Rev. 1.9 2/2 FS8205 1. Features 1.1 Low on-resistance 1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 37 mΩ MAX. (VGS = 2.5V, ID = 3A) Applications „ 3. Li-ion battery management applications RT P r R ro U ef pe NE er rti ’ en es ce O nl y 2. Ordering Information Product Number Description Package Type Quantity/Reel FS8205 SOT23-6 package version SOT23-6 3,000 Pin Assignment FO 4. For FS8205 w : A~Z or A ~ Z Top points, bottom points & w: Lot no information 5. Absolute Maximum Ratings Symbol VDS Parameter Rating Units Drain-Source Voltage 20 V Gate-Source Voltage ±12 V ID @TA = 25℃ Continuous Drain Current3 6 A ID @TA = 70℃ Continuous Drain Current3 5 A IDM Pulsed Drain Current1 25 A Total Power Dissipation 1 W Fo VGS PD @TA = 25℃ Linear Derating Factor 0.008 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Rev. 1.9 3/3 FS8205 6. Thermal Data Symbol Parameter Rthj-a 7. Value Thermal Resistance Junction-ambient3 Max. Unit 125 ℃/W Electrical Characteristics Electrical Characteristics @Tj = 25℃ ( unless otherwise specified ) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RT P r R ro U ef pe NE er rti ’ en es ce O nl y Static Characteristics Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA 20 - - V ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS = 4.5V, ID = 4A - 23 28 mΩ VGS = 2.5V, ID = 3A - 30 37 mΩ VGS(th) IDSS IGSS 8. Gate Threshold Voltage VDS = VGS, ID = 250uA 0.45 - 1.2 V Drain-Source Leakage Current (Tj = 25℃) VDS =16V, VGS = 0V - - 1 uA Drain-Source Leakage Current (Tj = 70℃) VDS =16V, VGS = 0V - - 25 uA Gate-Source Leakage VGS = ±10V - - ±0.1 uA Min. - Typ. - Max. 0.83 1.2 Units A V Source-Drain Diode Parameter Continuous Source Current (Body Diode) Forward On Voltage2 Test Conditions VD = VG = 0V, VS = 1.2V Tj = 25℃, IS = 1.25A, VGS = 0V FO Symbol IS VSD Notes： Fo 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦ 300us, duty cycle ≦ 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board；208℃/W when mounted on Min. copper pad. Rev. 1.9 4/4 FS8205 9. Typical Characteristics On-Region characteristics @ Ta=25Deg On-Region characteristics @ Ta=125Deg 25 25 15 2.5V 3.0V 10 3.5V 4.0V 5 4.5V 0 Id, Drain Current ( A ) 20 2.0V 2.0V 15 2.5V 3.0V 10 3.5V 4.0V 5 RT P r R ro U ef pe NE er rti ’ en es ce O nl y Id, Drain Current ( A ) 20 4.5V 0 0 -5 0.5 1 1.5 2 0 0.5 Vds, Drain to Source Voltage ( V ) 1.5 2 Vds, Drain to Source Voltage ( V ) Fig 2. Typical Output Characteristics On-Resistance Variation with Temperature Gate Threshold Voltage Temperature Coefficient Vgs=4.5V, Ids=4A Vgs=Vdg, Ids=250uA 1.4 1.4 1.2 1.2 Vth - Normalized 1 0.8 0.6 FO 0.4 1 0.8 0.6 0.4 0.2 0.2 0 0 -50 Threshold Voltage Drain - Source On-Resistance Fig 1. Typical Output Characteristics Rds(on) - Normalized 1 -5 0 50 100 150 -50 0 50 100 150 Temperature ( Deg ) Temperature ( Deg ) Fig 3. Normalized On-Resistance Fig 4. Gate Threshold Variation with Temperature Forward Characteristic of Rev erse Diode 2.5 2 1.5 Is (A) Ta=25Deg 1 0.5 Fo 0 Ta=125Deg -0.3 0.2 0.7 1.2 Vsd, Soucre to Drain Voltage ( V ) Fig 5. Forward Characteristic of Reverse Diode Rev. 1.9 5/5 FS8205 FO RT P r R ro U ef pe NE er rti ’ en es ce O nl y 10. Package Information 11. Revision History Version 1.0 1.1 1.2 1.3 1.4 1.5 Page 2009/08/17 2010/01/26 3 2010/06/02 2010/06/10 2010/08/31 2010/04/27 3 4 3 4 2011/09/08 2011/11/02 2014/05/22 2016/08/22 6 3 2 3 Description Version 1.0 released Rds25 TYP 28mohm MAX 36mohm Rds45 TYP 22mohm MAX 26mohm Rds45 TYP 23mohm MAX 27mohm IDSS Test Conditions：VDS=16V VGS=0V Revise Pin Assignment Rds25 TYP：30mohm MAX：37mohm Rds45 TYP：23mohm MAX：28mohm VGS(th) MIN：0.45V MAX：1.2V IGSS MAX：±0.1uA Revise Package Outline Revise Pin Assignment Revised company address Revise Package Marking Information Fo 1.6 1.7 1.8 1.9 Date Rev. 1.9 6/6