1N5819WS

Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE 1N5819WS FEATURES or use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING + - 1N5819WS: SL SOD-323 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 1N5819WS Unit 40 V 40 V 28 V IO 1 A IFSM 9 A Repetitive Peak Forward Current IFR 1.5 A Power Dissipation M Pd 250 mW RθJA 500 TSTG -65~+150 Paramete r Symbol Non-Repetitive Peak reverse voltage VRM Peak repetitive Peak reverse voltage VRRM Working Peak Reverse Voltage DC Blocking Voltage VRWM RMS Reverse Voltage VR(RMS) Average Rectified Output Current Peak forward surge current @=8.3ms ThermalResistanc Junction to Ambient Storage temperature VR ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Reverse breakdown voltage Symbol V(BR) /W unless otherwise specified) Test conditions IR= 1mA Min Max 40 V Reverse voltage leakage current IR VR=40V 1 Forward voltage VF IF=1A IF=3A 0.6 VR=4V, f=1MHz 120 Diode capacitance C Unit mA V 0.9 pF D GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Diodes 1N5819WS Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2