B5819LW

Plastic-Encapsulate Diodes B5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters + - Free wheeling, and polarity protection applications. SOD-123 MARKING: S4 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Non-Repetitive Peak reverse voltage VRM 40 V Peak Repetitive Peak reverse voltage VRRM 40 V Working Peak Reverse Voltage VRWM 40 V VR 40 V 28 V DC Blocking RMS Reverse Voltage R(RMS) Average Rectified Output Current IO 0.5 A Repetitive Peak Forward Current IFRM 1.5 A Power Dissipation Pd 500 mW Thermal Resistance Junction to Ambient RθJA 250 /W Storage temperature TSTG -65~+150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN V(BR) I R = 1mA 40 Reverse voltage leakage current IR VR= 40V Forward voltage VF Reverse breakdown voltage Diode capacitance CD GUANGDONG HOTTECH MAX UNIT V 1 mA I F =1A 0.6 V I F =3A 0.9 V VR=4V, f=1MHz 120 pF INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Diodes B5819W Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2