LL4148

Glass-Encapsulate Diodes FAST SWITCHING DIODES LL4148 FEATURES Cathode indification φ1 .5±0.1 Silicon epitaxial diode 500mW power dissipation High speed switching diode MECHANICAL DATA 0.4±0.1 3.5 ±0.2 Polarity:Color band denotes cathode Case: LL-34(SOD-80) Dimensions in millimeters LL-34 glass case Weight: Approx 0.031 grams Absolute Maximum Ratings (TA=25 Parameter unless otherwise noted) Symbol Value Unit v Reverse voltage VR 75 Peak reverse voltage V RM 100 v IO 150 mA IFSM 500 1) mA Pow er dissipaton at tamb=25 C Ptot 500 mW Junction temperature TJ 175 Average Rectified Current Non-repetitive Peak Forward Current o Storage temperature range TSTG o C o C -55-175 1) Valid prov ided that electrodes are kept at ambient temperature. ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Min. Typ. Max. Unit Forward voltage @ IF=10mA VF 1.0 v Leakage current at VR=20V IR 25 nA at VR=75V IR 5 uA IR 50 uA Capacitance at V F=V R=0V Ctot 4 pF Voltage rise when switching on tested with Vfr 2.5 V trr 4.0 nS RθJA 350 K/W at VR=20V o TJ=150 C 50mA pulses tp=0,1uS , rise time 30ns, f p=5 to 100KHz Reverse recovery time from IF=10mA VR=6V,RL=100 ,at IR=1mA Thermal resistance junction to ambient Rectification effciency at 100MHz,VRF=2V V GUANGDONG HOTTECH 0.45 INDUSTRIAL CO., LTD Page:P2-P1 Glass-Encapsulate Diodes LL4148 Typical Characteristics mA 3 10 mW 1000 900 10 800 2 IF O TJ =100 C 700 Ptot 600 10 500 O TJ =25 C 400 1 300 200 -1 10 100 0 0 25 -2 100 10 175 200℃ T 0 1 F AMBIENT TEMPERATURE FIG.2-- FORWARD CHARACTERISTICS 100 IFRM 2V V A I V=tp/T T=1/tp 10 0.1 tp n=0 0.2 1 IFRM T 0.3 0.1 -3 -5 10 10 -2 10 -1 10 1 10S FIG.3-ADMISSIBLE REPETITIVE PEAK FORWORD CURRENT VERSUS PULSE DURATION GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2