SD103AW

Plastic-Encapsulate Diodes SD103AW/BW/CW SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Drop. Guard Ring Construction For Transient Protection. Negligible Reverse Recovery Time. Low Reverse Capacitance. MARKING: SD103AW :S4 MAXIMUM RATINGS (TA=25 SD103BW:S5 + SOD-123 SD103CW:S6 unless otherwise noted) Parameter Symbol Non-Repetitive Peak reverse voltage SD103AW SD103BW SD103CW 40 30 20 Unit VRM Peak Repetitive Peak reverse voltage VRRM Working Peak Reverse Voltage VRWM V V V DC Blocking VR Forward Continuous Current IF 350 mA IFRM 1.5 A Pd 400 mW Thermal Resistance Junction to Ambient RθjA 300 /W Storage temperature Tstg -65-125 Repetitive Peak Forward Current @t≤1.0s Power Dissipation ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Reverse Breakdown Voltage 28 21 Min. SD103AW V(BR)R SD103BW SD103CW Typ. Unit Conditions 40 V IR=10μA V(BR)R 30 V IR =10μA V(BR)R 20 V IR =10μA 0.37 V IF=20mA 0.60 V IF=200mA VF Reverse current V unless otherwise specified) Symbol Forward voltage 14 Max. SD103AW IRM 5.0 μA VR=30V SD103BW IRM 5.0 μA VR=20V SD103CW IRM 5.0 μA VR=10V Capacitance between terminals CT 50 pF VR=0,f=1MHz Reverse Recovery Time trr 10 ns IR=IF=200mA Irr=0.1*IR,RL=100Ω GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Diodes SD103AW/BW/CW Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2