SS16

厂商：
MDD(辰达半导体)
封装：
SMA(DO-214AC)
描述：
肖特基二极管电压:60V 电流:1A SMA(DO-214AC)

数据手册：

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详情介绍
数据手册
价格&库存

SS16 数据手册

SS12 THRU SS1200 Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features DO-214AC/SMA  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0     For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement 0.110(2.80) 0.094(2.40) 0.067 (1.70) 0.039 (1.00)  High forward surge current capability  High temperature soldering guaranteed: 0.177(4.50) 0.157(3.99) 0.012(0.305) 0.006(0.152) 250 °C/10 seconds at terminals 0.096(2.42) 0.078(1.98) Mechanical Data 0.059(1.50) 0.035(0.90) Ca s e : JEDEC DO-214AC/SMA molded plastic body Termina ls : Solderable per MIL-STD-750,Method 2026 Po larity : Color band denotes cathode end Moun ting Po s ition : Any Weigh t : 0.002 ounce, 0.07 grams 0.008(0.203)MAX. 0.205(5.20) 0.188(4.80) Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS MDD SS12 MDD SS13 MDD SS14 MDD SS15 MDD SS16 MDD SS18 MDD SS110 MDD SS1150 MDD SS1200 UNITS Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 80 100 150 200 V Maximum RMS voltage Maximum DC blocking voltage VRMS VDC 14 20 21 30 28 40 35 50 42 60 56 80 70 100 105 150 140 200 V V Marking Code I(AV) 1.0 A 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 25 A Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25℃ at rated DCblocking voltage TA=100℃ VF Maximum average forward rectified current Peak forward surge current Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction temperature range Storage temperature range 0.55 0.3 10.0 IR CJ 110 0.70 0.85 0.2 5.0 0.9 V 0.1 2.0 pF 80 RθJA 90.0 TJ -55 to +150 ℃ TSTG -55 to +150 ℃ ℃/W Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 2.0”x2.0”(5.0x5.0cm) copper pad areas http://www.microdiode.com mA Rev:2024A3 Page :1 SS12 THRU SS1200 Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere Typical Characterisitics Fig.1 Forward Current Derating Curve Fig.2 Typical Reverse Characteristics Instaneous Reverse Current ( μA) Average Forward Current(A) 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 10 4 10 3 10 2 TJ=100°C TJ=75°C SS12/SS14 SS16-SS120 101 10 TJ=25°C 0 0 Case Temperature(℃) 40 20 60 80 100 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Fig.4 Typical Junction Capacitance 500 20 TJ=25°C 200 1.0 Junction Capacitance (pF) Instaneous Forward Current (A) 10 SS12/SS14 SS16 SS18~SS1120 SS1150/SS1200 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 50 SS12/SS14 20 SS16-SS1200 10 1.8 0.1 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 100 25 20 15 10 05 8.3 ms Single Half Sine Wave (JEDEC Method) 1 10 Number of Cycles at 60Hz 100 Transient Thermal Impedance（°C/W） Peak Forward Surage Current (A) 100 Fig.6- Typical Transient Thermal Impedance 30 00 10 1 Reverse Voltage (V) Instaneous Forward Voltage (V) 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） The curve above is for reference only. http://www.microdiode.com Rev:2024A3 Page :2 SS12 THRU SS1200 Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere Packing information unit:mm P0 P1 Item D1 Symbol Tolerance SMA A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.80 5.33 2.36 1.50 330.00 50.00 178.00 62.00 13.00 1.75 5.50 4.00 4.00 2.00 0.28 12.00 18.00 d Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width E W1 F B A W P D2 T C D Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE SMA REEL SIZE 7" APPROX. GROSS WEIGHT (kg) REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 2,000 4.0 4,000 183*155*183 178 382*356*392 10,000 290*290*38 330 310*310*360 80,000 11.0 15,000 335*335*38 330 350*330*360 120,000 14.5 SMA 11" 5,000 4.0 SMA 13" 7,500 4.0 CARTON SIZE (m/m) CARTON (pcs) 80,000 16.0 Suggested Pad Layout http://www.microdiode.com Symbol A Unit (mm) 1.68 Unit (inch) 0.066 B 1.52 0.060 C 3.93 0.154 D 2.41 0.095 E 5.45 0.215 Rev:2024A3 Page :3

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SS16

PDF文档的物料型号为SS12，SS13，SS14，SS15，SS16，SS17，SS18，SS19，SS20，SS21，SS22，SS23，SS24，SS25，SS26，SS27，SS28，SS29，SS30，SS31，SS32，SS34，SS35，SS36，SS37，SS38，SS39，SS40，SS41，SS42，SS43，SS45，SS46，SS47，SS48，SS49，SS50，SS51，SS52，SS53，SS54，SS55，SS56，SS57，SS58，SS59，SS60，SS61，SS62，SS63，SS64，SS65，SS66，SS67，SS68，SS69，SS70，SS71，SS72，SS73，SS74，SS75，SS76，SS77，SS78，SS79，SS80，SS81，SS82，SS81，SS83，SS85，SS86，SS87，SS88，SS90，SS91，SS92，SS95，SS100，SS110，SS120。

器件简介为肖特基势垒二极管，使用硅基材料，具有快速开关特性，低正向压降和高浪涌电流能力。

引脚分配为单向导电性，阳极和阴极。

参数特性包括正向电流（If），反向电压（Vr），正向电压（Vf），反向恢复时间（Trr）等。

功能详解涉及其在电路中作为整流器，开关或保护元件的应用。

应用信息包括电源管理，电机控制，变频器等。

封装信息详细说明了器件的物理尺寸和电气连接方式。

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