PESD12VL2BT,215

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PESDxL2BT series Low capacitance double bidirectional ESD protection diodes in SOT23 Rev. 02 — 25 August 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diodes in a SOT23 small Surface Mounted Device (SMD) plastic package designed to protect two signal lines from the damage caused by ESD and other transients. 1.2 Features n n n n ESD protection of two lines Max. peak pulse power: PPP = 350 W Low clamping voltage: VCL = 26 V Small SMD plastic package n n n n Ultra low leakage current: IRM < 90 nA ESD protection up to 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); IPP = 15 A 1.3 Applications n Computers and peripherals n Audio and video equipment n Cellular handsets and accessories n Communication systems n Portable electronics n Subscriber Identity Module (SIM) card protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse standoff voltage Cd Min Typ Max Unit PESD3V3L2BT - - 3.3 V PESD5V0L2BT - - 5.0 V PESD12VL2BT - - 12 V PESD15VL2BT - - 15 V PESD24VL2BT - - 24 V PESD3V3L2BT - 101 - pF PESD5V0L2BT - 75 - pF PESD12VL2BT - 19 - pF PESD15VL2BT - 16 - pF PESD24VL2BT - 11 - pF diode capacitance Conditions VR = 0 V; f = 1 MHz PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 2. Pinning information Table 2. Pinning Pin Description 1 cathode 1 2 cathode 2 3 double cathode Simplified outline Symbol 3 1 3 1 2 2 006aaa155 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD3V3L2BT - plastic surface mounted package; 3 leads SOT23 PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT 4. Marking Table 4. Marking codes Type number Marking code[1] PESD3V3L2BT V3* PESD5V0L2BT V4* PESD12VL2BT V5* PESD15VL2BT V6* PESD24VL2BT V7* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 2 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit PESD3V3L2BT - 350 W PESD5V0L2BT - 350 W PESD12VL2BT - 200 W PESD15VL2BT - 200 W - 200 W PESD3V3L2BT - 15 A PESD5V0L2BT - 13 A PESD12VL2BT - 5 A PESD15VL2BT - 5 A PESD24VL2BT - 3 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C PPP Parameter Conditions peak pulse power tp = 8/20 µs [1][2] PESD24VL2BT peak pulse current IPP tp = 8/20 µs [1][2] [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 3 or 2 to 3. Table 6. Symbol VESD ESD maximum ratings Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) Min Max Unit - 30 kV - 23 kV - 10 kV [1][2] PESD3V3L2BT PESD5V0L2BT PESD12VL2BT PESD15VL2BT PESD24VL2BT PESDxL2BT series HBM MIL-STD883 [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 3 or 2 to 3. Table 7. ESD standards compliance ESD Standard Conditions IEC 61000-4-2, level 4 (ESD) > 15 kV (air); > 8 kV (contact) HBM MIL-STD883, class 3 > 4 kV PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 3 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESDXL2BT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 25 August 2009 4 of 14 PESDxL2BT series NXP Semiconductors Low capacitance double bidirectional ESD protection diodes in SOT23 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage IRM VBR Conditions Min Typ Max Unit PESD3V3L2BT - - 3.3 V PESD5V0L2BT - - 5.0 V PESD12VL2BT - - 12 V PESD15VL2BT - - 15 V PESD24VL2BT - - 24 V reverse leakage current PESD3V3L2BT VRWM = 3.3 V - 0.09 2 µA PESD5V0L2BT VRWM = 5.0 V - 0.01 1 µA PESD12VL2BT VRWM = 12 V -