PMEG2010EA,115

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET PMEG2010EA Low VF (MEGA) Schottky barrier diode Product data sheet Supersedes data of 2002 Dec 10 2004 Feb 06 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode FEATURES PMEG2010EA PINNING • Forward current: 1 A PIN DESCRIPTION • Reverse voltage: 20 V 1 cathode • Ultra high-speed switching 2 anode • Very low forward voltage • Very small plastic SMD package. columns APPLICATIONS 1 2 • Ultra high-speed switching • Voltage clamping • Protection circuits. MGU328 DESCRIPTION Marking code: E1. The marking bar indicates the cathode. Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOD323 (SC-76) very small SMD plastic package. Fig.1 Simplified outline (SOD323; SC-76) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PMEG2010EA − DESCRIPTION VERSION plastic surface mounted package; 2 leads SOD323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 20 V IF continuous forward current − 1 A IFSM non-repetitive peak forward current − 5 A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C 2004 Feb 06 tp = 8.3 ms half sinewave; JEDEC method 2 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode PMEG2010EA CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF PARAMETER continuous forward voltage IR continuous reverse current Cd diode capacitance CONDITIONS TYP. MAX. UNIT see Fig.2; note 1 IF = 10 mA 240 270 mV IF = 100 mA 300 350 mV IF = 1 000 mA 480 550 mV VR = 5 V 5 10 μA VR = 8 V 7 20 μA VR = 15 V 10 50 μA VR = 5 V; f = 1 MHz; see Fig.4 19 25 pF see Fig.3; note 1 Note 1. Pulsed test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT note 1 220 K/W note 2 180 K/W Notes 1. Device mounted on an FR4 printed-circuit board with Cu clad 10 x 10 mm. 2. Device mounted on an FR4 printed-circuit board with Cu clad 40 x 40 mm. 2004 Feb 06 3 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode PMEG2010EA GRAPHICAL DATA MHC311 103 handbook, halfpage MHC312 105 handbook, halfpage IR (μA) IF (mA) (1) 104 102 (2) 103 (1) (2) (3) 10 102 (3) 1 10 10−1 0 0.2 0.4 VF (V) 1 0.6 0 5 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MHC313 handbook, halfpage Cd (pF) 60 40 20 0 0 5 10 15 VR (V) 20 Tamb = 25 °C; f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 2004 Feb 06 15 20 25 VR (V) (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. 80 10 4 Reverse current as a function of reverse voltage; typical values. NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode PMEG2010EA PACKAGE OUTLINE Plastic surface-mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION SOD323 2004 Feb 06 REFERENCES IEC JEDEC JEITA SC-76 5 EUROPEAN PROJECTION ISSUE DATE 03-12-17 06-03-16 NXP Semiconductors Product data sheet Low VF (MEGA) Schottky barrier diode PMEG2010EA DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Feb 06 Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/02/pp7 Date of release: 2004 Feb 06 Document order number: 9397 750 12626