LL4448

LL4448 Silicon Epitaxial Planar Switching Diode LL-34 Fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard 1N4448. Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage VRM Reverse Voltage VR Average Rectified Forward Current IF(AV) Surge Forward Current at t < 1 s IFSM E T M E S Power Dissipation Ptot Junction Temperature Tj Storage Temperature Range 1) H C Symbol Tstg Valid provided that electrodes are kept at ambient temperature. Value Unit 100 V 75 V 150 mA 500 mA 500 1) mW 175 O C - 65 to + 175 O C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 100 mA Reverse Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage at IR = 100 µA Capacitance at VR = 0, f = 1 MHz Reverse Recovery Time at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω Symbol Min. Max. Unit VF 0.62 - 0.72 1 V IR IR IR - 25 5 50 nA µA µA V(BR)R 100 - V Ctot - 4 pF trr - 4 ns SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 15/06/2009 LL4448 Dynamic forward resistance versus forward current Forward characteristics mA 10 LL 4448 LL 4448 3 10 4 Tj=25 oC f=1KHz 5 2 10 2 o Tj=100 C iF 10 3 o Tj=25 C rf 10 5 H C 2 10 2 5 1 2 10 E T M E S 10 -1 5 2 10 -2 0 1 1 2V 10 -1 10 -2 VF Admissible power dissipation versus ambient temperature 1 10 2 mA 10 IF Relative capacitance versus reverse voltage Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature mW 1000 LL 4448 900 Tj=25 oC f=1MHz 1.1 800 P tot LL 4448 Ctot(VR ) Ctot(0V) 1.0 700 600 500 0.9 400 300 0.8 200 100 0.7 0 0 200 oC 100 Tamb 0 0 2 4 8 6 10 V VR SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 15/06/2009 LL4448 Leakage current versus junction temperature nA 10 4 LL 4448 5 2 10 3 IR 5 2 H C 10 2 5 2 10 5 E T M E S VR =20V 2 1 0 o 200 C 100 Tj Admissible repetitive peak forward current versus pulse duratin Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature A LL 4448 100 v=tp/T I 5 4 3 I FRM 2 v=0 tp 10 I FRM T=1/fp 0.1 5 4 3 2 0.2 1 0.5 t T 5 4 3 2 0.1 10 -5 2 5 10 -4 2 5 10 -3 2 5 10 -2 2 5 10 -1 2 5 1 2 5 10 s tp SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 15/06/2009