BZV55C7V5

• ZENER DIODES BZV55 C2V4 thru BZV55 C75 •LEADLESS PACKAGE FOR SURFACE MOUNT • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Derating: 3.33 mW / °C above +50°C Forward Voltage: @ 200mA: 1.1 Volts maximum ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. TYPE MAXIMUM DIFFERENTIAL RESISTANCE rdiff @ I Z ZENER VOLTAGE (NOTE 1) VZ @ I ZT VOLTS MIN MAX mA OHMS mA MAXIMUM REVERSE CURRENT IR @ VR µA VOLTS BZV55 BZV55 BZV55 BZV55 BZV55 C2V4 C2V7 C3V0 C3V3 C3V6 2.2 2.5 2.8 3.1 3.4 2.6 2.9 3.2 3.5 3.8 5 5 5 5 5 100 100 95 95 90 5 5 5 5 5 50 20 10 5 5 1 1 1 1 1 BZV55 BZV55 BZV55 BZV55 BZV55 C3V9 C4V3 C4V7 C5V1 C5V6 3.7 4.0 4.4 4.8 5.2 4.1 4.6 5.0 5.4 6.0 5 5 5 5 5 90 90 80 60 40 5 5 5 5 5 3 3 3 2 1 1 1 2 2 2 BZV55 BZV55 BZV55 BZV55 BZV55 C6V2 C6V8 C7V5 C8V2 C9V1 5.8 6.4 7.0 7.7 8.5 6.6 7.2 7.9 8.7 9.6 5 5 5 5 5 10 15 15 15 15 5 5 5 5 5 3 2 1 .700 .500 4 4 5 5 6 BZV55 BZV55 BZV55 BZV55 BZV55 C10 C11 C12 C13 C15 9.4 10.4 11.4 12.4 13.8 10.6 11.6 12.7 14.1 15.6 5 5 5 5 5 20 20 25 30 30 5 5 5 5 5 .200 .100 .100 .100 .050 7 8 8 8 10.5 BZV55 BZV55 BZV55 BZV55 BZV55 C16 C18 C20 C22 C24 15.3 16.8 18.8 20.8 22.8 17.1 19.1 21.2 23.3 25.6 5 5 5 5 5 40 45 55 55 70 5 5 5 5 5 .050 .050 .050 .050 .050 11.2 12.6 14.0 15.4 16.8 BZV55 BZV55 BZV55 BZV55 BZV55 C27 C30 C33 C36 C39 25.1 28.0 31.0 34.0 37.0 28.9 32.0 35.0 38.0 41.0 2 2 2 2 2 80 80 80 90 130 2 2 2 2 2 .050 .050 .050 .050 .050 18.9 21.0 23.1 25.2 27.3 BZV55 BZV55 BZV55 BZV55 BZV55 C43 C47 C51 C56 C62 40.0 44.0 48.0 52.0 58.0 46.0 50.0 54.0 60.0 66.0 2 2 2 2 2 150 170 180 200 215 2 2 2 2 2 .050 .050 .050 .050 .050 30.1 32.9 35.7 39.2 43.4 BZV55 C68 BZV55 C75 64.0 70.0 72.0 79.0 2 2 240 255 2 2 .050 .050 47.6 52.2 NOTE 1 Nominal Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C + 3°C. DIM D F G G1 S MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.70 0.063 0.067 0.41 0.55 0.016 0.022 3.30 3.70 .130 .146 2.54 REF. .100 REF. 0.03 MIN. .001 MIN. DESIGN DATA CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 100 ÞC/W maximum at L = 0 inch THERMAL IMPEDANCE: (ZOJX): 35 ÞC/W maximum POLARITY: Diode to be operated with the banded (cathode) end positive. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device. 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (978) 689-0803 WEBSITE: http://www.microsemi.com 165 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Microsemi: BZV55C2V7 BZV55C9V1 BZV55C56 BZV55C6V2 BZV55C4V7 BZV55C10 BZV55C6V8 BZV55C30 BZV55C11 BZV55C3V6 BZV55C3V9 BZV55C51 BZV55C16 BZV55C4V3 BZV55C39 BZV55C3V0 BZV55C47 BZV55C68 BZV55C33 BZV55C8V2 BZV55C27 BZV55C43 BZV55C22 BZV55C7V5 BZV55C2V4 BZV55C75 BZV55C36 BZV55C20 BZV55C5V1 BZV55C62 BZV55C24 BZV55C5V6 BZV55C15 BZV55C30/TR BZV55C39/TR BZV55C36/TR BZV55C4V7/TR BZV55C9V1/TR BZV55C20/TR BZV55C47/TR BZV55C6V2/TR BZV55C3V9/TR BZV55C4V3/TR BZV55C15/TR BZV55C51/TR BZV55C43/TR BZV55C5V6/TR BZV55C7V5/TR BZV55C27/TR BZV55C3V6/TR BZV55C5V1/TR BZV55C75/TR BZV55C16/TR BZV55C18 BZV55C3V0/TR BZV55C33/TR BZV55C8V2/TR BZV55C2V4/TR BZV55C6V8/TR BZV55C56/TR BZV55C24/TR BZV55C22/TR BZV55C62/TR BZV55C68/TR BZV55C2V7/TR