PJM10H02NSA

PJM10H02NSA N-Channel Enhancement Mode Power MOSFET SOT-23 Features ⚫ High density cell design for ultra low RDS(on) ⚫ Excellent package for good heat dissipation ⚫ VDS= 100V,ID= 2A RDS(on)< 240mΩ @VGS= 10V 1. Gate 2.Source 3.Drain Marking Code:0102 Applications Schematic Diagram 3.Drain ⚫ Power switching application ⚫ Uninterruptible power supply 1.Gate 2.Source Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbol Value Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 2 A Drain Current-Pulsed Note1 IDM 5 A Maximum Power Dissipation PD 0.9 W Junction Temperature TJ 150 °C TSTG -55 to +150 °C RθJA 139 °C/W Storage Temperature Range Thermal Characteristics Thermal Resistance,Junction-to-Ambient Note2 www.pingjingsemi.com Revision：3.0 Oct-2022 1/7 PJM10H02NSA N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250μA 100 -- -- V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V -- -- 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V -- -- ±100 nA Gate Threshold Voltage Note3 VGS(th) VDS=VGS,ID=250μA 1.2 1.8 2.5 V Drain-Source On-Resistance Note3 RDS(on) VGS=10V,ID=1A -- 210 240 mΩ gFS VDS=5V,ID=1A 1 -- -- S -- 190 -- pF -- 22 -- pF Static Characteristics Forward Transconductance Note3 Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 13 -- pF Turn-on Delay Time td(on) -- 6 -- nS Turn-on Rise Time tr VDD=50V,ID=1.3A,RL=39Ω -- 10 -- nS Turn-off Delay Time td(off) VGS=10V,RGEN=1Ω -- 10 -- nS VDS=50V,VGS=0V,f=1MHz Switching Characteristics Turn-off Fall Time tf -- 6 -- nS Total Gate Charge Qg -- 5.2 -- nC Gate-Source Charge Qgs -- 0.75 -- nC Gate-Drain Charge Qgd -- 1.4 -- nC -- -- 1.2 V -- -- 2 A VDS=50V,ID=1.3A, VGS=10V Source-Drain Diode Characteristics Diode Forward Voltage Note3 VSD Diode Forward Current Note2 IS VGS=0V,IS=1.3A Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. www.pingjingsemi.com Revision：3.0 Oct-2022 2/7 PJM10H02NSA N-Channel Enhancement Mode Power MOSFET ID Drain Current (A) Normalized On-Resistance Typical Characteristic Curves TJ Junction Temperature (℃) ID Drain Current (A) VGS Gate-Source Voltage (V) VDS Drain-Source Voltage (V) Qg Gate Charge (nC) RDS(on) On-Resistance (Ω) IS Reverse Drain Current (A) VGS Gate-Source Voltage (V) ID Drain Current (A) www.pingjingsemi.com Revision：3.0 Oct-2022 VSD Source-Drain Voltage (V) 3/7 C Capacitance (nF) Normarlized Breakdown Voltage PJM10H02NSA N-Channel Enhancement Mode Power MOSFET TJ Junction Temperature (℃) ID Drain Current (A) Power Dissipation (W) VDS Drain-Source Voltage (V) TJ Junction Temperature (℃) r(t),Normalized Effective Transient Thermal Impedance VDS Drain-Source Voltage (V) Square Wave Pluse Duration(sec) www.pingjingsemi.com Revision：3.0 Oct-2022 4/7 PJM10H02NSA N-Channel Enhancement Mode Power MOSFET Package Outline SOT-23 Dimensions in mm Ordering Information Device Package Shipping PJM10H02NSA SOT-23 3,000PCS/Reel&7inches www.pingjingsemi.com Revision：3.0 Oct-2022 5/7 PJM10H02NSA N-Channel Enhancement Mode Power MOSFET Conditions of Soldering and Storage  Recommended condition of reflow soldering Recommended peak temperature is over 245 OC. If peak temperature is below 245 OC, you may adjust the following parameters:  Time length of peak temperature (longer)  Time length of soldering (longer)  Thickness of solder paste (thicker)  Conditions of hand soldering  Temperature: 370 OC  Time: 3s max.  Times: one time   Storage conditions Temperature 5 to 40 OC  Humidity 30 to 80% RH  Recommended period One year after manufacturing www.pingjingsemi.com Revision：3.0 Oct-2022 6/7 PJM10H02NSA N-Channel Enhancement Mode Power MOSFET Package Specifications  The method of packaging Cover Tape 3,000 pcs per reel SOT-23 Carrier Tape 30,000 pcs per box 10 reels per box 120,000 pcs per carton 4 boxes per carton  Embossed tape and reel data D A T2 T1 Symbol A B C E F D T1 T2 B C E Value (unit: mm) Ø 177.8±1 2.7±0.2 Ø 13.5±0.2 Ø 54.5±0.2 12.3±0.3 9.6+2/-0.3 1.0±0.2 1.2±0.2 F Reel (7'') www.pingjingsemi.com Revision：3.0 Oct-2022 7/7