HG232EM/TR

HG232E +5V-Powered, Multichannel RS-232 Drivers / Receivers HG232E is purposed for application in high-performance information processing systems and control devices of wide application. Input voltage levels are compatible with standard СMOS levels. • Output voltage levels are compatible with input levels of K-MOS, N-MOS and TTL integrated circuits. • Supply voltage : 5V • Low input current: 1.0 ; 0.1 at Т = 25 °С. • Output current 24 mA. • Latching current not less than 450 mA at Т = 25°С ㎂ ㎂ • The transmitter outputs and receiver inputs are protected to ±15kV Air ESD. Truth table Inputs Outputs RIN, TIN ROVT, TOVT H L L H Pin symbols in package Note H – voltage high level; L – low voltage level http://www.hgsemi.com.cn 1 C1+ 01 16 VCC V+ 02 15 GND C1- 03 14 T1OUT C2+ 04 13 R1IN C2- 05 12 R1OUT V- 06 11 T1IN T2OUT 07 10 T2IN R2IN 08 09 R2OUT 2018 AUG HG232E Table of pin description Pin No. 01 Symbol C1+ Pin name Output of external capacitance of positive voltage multiplier unit 02 V+ Output of positive voltage of multiplier unit 03 C1- Output of external capacitance of positive voltage multiplier unit 04 C2+ Output of external capacitance of negative voltage multiplier unit 05 C2- Output of external capacitance of negative voltage multiplier unit 06 V- Output of negative voltage of multiplier unit 07 T2OUT Output of transmitter data (levels RS – 232) 08 R2IN 09 R2OUT Output of receiver data (levels TTL/KMOS) 10 T2IN Input of transmitter data (levels TTL/KMOS) 11 T1IN Input of transmitter data (levels TTL/KMOS) 12 R1OUT Output of receiver data (levels TTL/KMOS) 13 R1IN 14 T1OUT Output of transmitter data (levels RS – 232) 15 GND Common output 16 VCC Supply output of voltage source Input of receiver data (levels RS – 232) Input of receiver data (levels RS – 232) Maximum conditions Rate Symbol Parameter min max -0.3 6.0 Unit VCC Supply voltage V V+ Transmitter high output voltage VCC -0.3 14 V- Transmitter low output voltage -0.3 -14 VTIN Transmitter input voltage -0.3 V+ +0.3 VRIN Receiver input voltage -30 30 - 842 mW - 762 Continuously 150 mA Dissipated power PD DIP – package SO - package ISC Output current of transmitter short circuit Та Ambient temperature http://www.hgsemi.com.cn -60 2 О С 2018 AUG HG232E Recommended Operating Conditions Symbol Rate Parameter min max VCC Supply voltage 4.5 5.5 V+ Transmitter output high voltage 5.0 - V- Transmitter output low voltage -5.0 - 0 VСС -30 30 - ±60 -40 85 VTIN Transmitter input voltage VRIN Receiver input voltage ISC Transmitter short circuit output current Та Ambient temperature Unit V mA О С + 5V 0.1 µ F + 0.1 µ F 16 1 0.1 µ F + 3 0.1 µ F + 4 5 C1+ V+ 2 C1- V- C2+ 6 C2- + 11 14 TTL/CMOS Intput 10 7 12 13 TTL/CMOS Output 5к 9 8 0.1 µ F RS-232 Output RS-232 Input 5к 15 http://www.hgsemi.com.cn 3 2018 AUG HG232E Static parameters Symbol ICC Parameter Consumption current static Test conditions VCC =5.0 V VIL = 0 V Unit Rate min - 25°°C max 10.0 -40 °C to 85 °C min max ∗ 14.0 0.2 0.9 0.2 1.0 - 2.4 - 2.3 0.8 - 0.9 - mA Receiver electrical parameters Vh Hysteresis voltage VCC =5.0 V V On On (operation) voltage VO ≤ 0.1 V IOL ≤ 20 uA Voff Off (dropout) voltage VO ≥ VCC -0.1 V IOH ≤ -20 uA VOL Output low voltage IOL = 3.2 mА VСС = 4.5 V VIH = 2.4 V - 0.3 - 0.4 VOH Output high voltage IOH = -1.0 mA VСС = 4.5 V VIL = 0.8 V 3.6 - 3.5 - Input resistance VСС = 5.0 V 3.0 7.0 3.0 7.0 RI V kOhm Transmitter electrical parameters VOL Output low voltage VСС = 4.5 V VIH = 2.0 V RL = 3.0 kOhm - -5.2 - -5.0 VOH Output high voltage VСС = 4.5 V VIL = 0.8 V RL = 3.0 kOhm 5.2 - 5.0 - IIL Input low current VСС =5.5 V VIL = 0 V - -1.0 - -10.0 IIH Input high current VСС =5.5 V VIH = VСС SR Speed of output front change VСС =5.0 V СL =50 - 1000 pF RL = 3.0 - 7.0 kOhm 3.0 30 2.7 27 RО Output resistance VСС = V+ = V- = 0 V VO = ± 2 V 350 - 300 - ISC Short circuit output current VСС =5.5 V VO = 0 V VI = VСС VI = 0 V ST Speed of information transmission http://www.hgsemi.com.cn 1.0 V uA 10.0 V/ ㎲ Ohm mA -50 50 VСС =4.5 V СL = 1000 pF RL = 3.0 kOhm tW = 7us (for extreme -tW = 8us) 4 140 - -60 60 120 - kbps 2018 AUG HG232E Dynamic parameters Symbol Parameter Test conditions 25 °C tPHLR (tPLHR) tPHLT (tPLHT) Unit Rate min max - 9.7 Signal propagation delay time VСС = 4.5 V when switching on (off) СL = 150 pF VIL = 0 V VIH = 3.0 V tLH = tHL ≤ 10 ns Signal propagation delay time VСС = 4.5 V when switching on (off) СL = 2500 pF VIL = 0 V VIH = 3.0 V RL = 3 kOhm tLH = tHL ≤ 10 ns 5.0 from -40 °C to 85 °C min max - ∗ 10 6.0 us ∗ Capacitance Parameter Symbol CIN Input capacitance CPD Dynamic capacitance VCC, Rate 5.0 9.0 Unit pF 90 Timing diagram when measuring IC dynamic parameters +3 V Rin 1.5 V 1.5 V 0V VOH 0.5Vcc 0.5Vcc Rout VOL t PHLR t PLHR Figure 3 http://www.hgsemi.com.cn 5 2018 AUG HG232E +3 V Tin 1.5 V 1.5 V 0V VOH 1.5 V 1.5 V Tout VOL t PHLT tPLHT Figure 4 Tin t SLH t SHL +3 V +3 V Tout -3 V -3 V Figure 5 tW tW tW tW TIN TOUT Control strobe Figure 6 http://www.hgsemi.com.cn 6 2018 AUG