WSC5N20A

WSC5N20A N-Ch MOSFET General Description Product Summery The WSC5N20A is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS 200V RDSON ID 5A 0.6Ω Applications The WSC5N20A meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z Telecom 48V input Forward Converters Features TO-251/ I-Pak Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current 5 A IDM Pulsed Drain Current 20 A PD Total Power Dissipation 43 W TJ,TSTG Operating Junction and storage Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient (Steady State) RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) RθJC www.winsok.tw 1 Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 50 ℃/W --- 35 ℃/W --- 3.5 ℃/W Dec.2014 WSC5N20A N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current Max. Unit 200 --- --- V --- 0.23 --- V/℃ --- 0.52 0.6 Ω 1.2 1.7 2.5 V --- -6.16 --- mV/℃ VDS=200V , VGS=0V , TJ=25℃ --- --- 25 VDS=160V , VGS=0V , TJ=55℃ --- --- 200 VGS=±30V , VDS=0V --- --- ±100 nA Reference to 25℃ , ID=1mA 2 VGS(th) Temperature Coefficient Typ. VGS=0V , ID=250uA △BVDSS/△TJ BVDSS Temperature Coefficient △VGS(th) Min. VGS=10V , ID=30A VGS=VDS , ID =250uA uA Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Min. Typ. Max. Unit gfs Forward Transconductance VDS=50V , ID=2.9A 2.6 --- --- S Qg Total Gate Charge (4.5V) --- 15 --- Qgs Gate-Source Charge --- 2.4 --- Qgd Gate-Drain Charge VDS=160V , VGS=10V , ID=2.9A --- 6.1 --- --- 6.4 --- --- 11 ----- Td(on) Tr Parameter Turn-On Delay Time Conditions VDD=100V VGS=10V Rise Time nC ns Turn-Off Delay Time RG=24Ω --- 20 Fall Time ID=2.9A --- 12 --- Ciss Input Capacitance VDS=25V --- 300 --- Coss Output Capacitance --- 53 --- Crss Reverse Transfer Capacitance VGS=0V f=1MHz --- 15 --- Min. Typ. Max. Unit A Td(off) Tf pF Diode Characteristics Symbol IS VSD Parameter Conditions Continuous Source Current VG=VD=0V , Force Current --- --- 5 Diode Forward Voltage VGS=0V , IS=2.9A , TJ=25℃ --- --- 1.2 V Min. Typ. Max. Unit Avalanche Characteristics Symbol Parameter Conditions EAS Single Pulse Avalanche Energy VGS=10V,L=0.1mH,IAS=2.9A --- --- 46 mJ EAR Repetitive Avalanche Energy VGS=10V,L=0.1mH,IAS=2.9A --- --- 4.3 mJ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t