WSC60N03

WSC60N03 N-Ch MOSFET General Description Product Summery The WSC60N03 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 4.1mΩ 60A Applications The WSC60N03 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology TO-251 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM 10s Steady State 30 V ±20 V 1 60 A 1 48 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 1 25 18 A 1 18 14 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Units 2 3 120 A EAS Single Pulse Avalanche Energy 252 mJ IAS Avalanche Current 48 A 50 W PD@TC=25℃ 4 Total Power Dissipation 4 3.5 2.5 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 175 W ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 62 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 25 ℃/W --- 2.8 ℃/W RθJC www.winsok.tw Typ. 1 Thermal Resistance Junction-Case Page 1 Dec.2014 WSC60N03 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.028 --- V/℃ VGS=10V , ID=30A --- 4.1 5.7 --- 5 10 1.3 1.9 2.5 V --- -6.16 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=4.5V , ID=15A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 25 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 3.1 Ω Qg Total Gate Charge (4.5V) --- 16.8 21.84 Qgs Gate-Source Charge --- 6.08 7.9 Qgd Gate-Drain Charge --- 4.93 6.41 30.26 VDS=15V , VGS=5V , ID=15A uA nC --- 15.13 Rise Time VDD=15V , VGS=10V , RG=3.3Ω --- 4 8 Turn-Off Delay Time ID=1A, RL=15Ω --- 45.27 90.54 Fall Time --- 7.6 15.2 Ciss Input Capacitance --- 2326 --- Coss Output Capacitance --- 330 --- Crss Reverse Transfer Capacitance --- 173 --- Min. Typ. Max. Unit 63 --- --- mJ Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=24A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=30A , dI/dt=100A/µs , TJ=25℃ --- --- 35 A --- --- 160 A --- --- 1 V --- 30 --- nS --- 24 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t