WSD2012DN25

WSD2012DN25 N-Ch MOSFET General Description Product Summery The WSD2012DN25 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 9.5mΩ(max) 11A Applications The WSD2012DN25 meet the RoHS and Green Product requirement with full function reliability approved. z Power management in portable and battery operated products z DC-DC Power System Features z ESD:2KV z Advanced high cell density Trench technology DFN2X5 Pin Configuration z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ ±12 V 1 11 A 1 9 A 95 A 1.7 W Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current 2 3 Total Power Dissipation 3 PD@TA=70℃ Total Power Dissipation 1.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA www.winsok.tw Parameter Typ. 1 Thermal Resistance Junction-ambient (Steady State) Thermal Resistance Junction-ambient 1 (t