WSD20L75DN

WSD20L75DN P-Ch MOSFET Product Summery General Description Description The WSD20L75DN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. BVDSS RDSON -20V ID 4.8mΩ -75A Applications z Load switch z Battery protection Features ● High density cell design for ultra low Rdson DFN3X3-8 Pin Configuration ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ Rating Units -20 V ±12 V 1 -75 A 1 -55 A 1 -13 A 1 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V ID@TA=70℃ Continuous Drain Current, VGS @ -10V -10 IDM Pulsed Drain Current2 -200 A 3 EAS Single Pulse Avalanche Energy 125 mJ IAS Avalanche Current PD@TC=25℃ -50 A 4 83 W 4 Total Power Dissipation PD@TA=25℃ Total Power Dissipation 6.2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 55 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 20 ℃/W --- 1.5 ℃/W RθJC www.winsok.tw Typ. 1 Thermal Resistance Junction-Case Page 1 Dec.2014 WSD20L75DN P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage Min. Typ. Max. Unit -20 --- --- V --- -0.0232 --- V/℃ --- 4.8 6.0 VGS=-2.5V , ID=-20A --- 6.2 8 VGS=-1.8V , ID=-10A --- 8.0 10 = VGS=-1.5V , ID -8A --- 12 15.5 = VGS=-1.2V , ID -5A --- 17.6 19.5 -0.4 -0.6 -1.0 V --- 4.6 --- mV/℃ VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 VDS=-20V , VGS=0V , TJ=55℃ --- --- -5 VGS=±8V , VDS=0V --- --- ±100 nA --- 80 --- S --- 3 --- Ω --- 55 75 --- 10 --- = VGS=0V , ID -250uA △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA VGS=-4.5V , ID=-20A RDS(ON) VGS(th) 2 Static Drain-Source On-Resistance Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Rg Gate Resistance VGS=VDS , ID =-250uA = VDS=-5V , ID -20A VDS=0V , VGS=0V , f=1MHz mΩ uA Qg Total Gate Charge (-4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 15 --- Turn-On Delay Time --- 18 --- VDD=-10V , VGS=-4.5V , --- 42 --- RG=3Ω ID=-20A ,RL=0.5Ω --- 85 --- Fall Time --- 23 --- Ciss Input Capacitance --- 3500 --- Coss Output Capacitance --- 577 --- Crss Reverse Transfer Capacitance --- 445 --- Min. Typ. Max. Unit 100 --- --- mJ Min. Typ. Max. Unit --- --- -45 A --- --- -90 A Td(on) Tr Td(off) Tf VDS=-10V , VGS=-4.5V , ID=-20A Rise Time Turn-Off Delay Time VDS=-15V , VGS=0V , f=1MHz nC ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions Single Pulse Avalanche Energy5 VDD=-10V , L=0.5mH , IAS=-10A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VGS=0V , IS=-10A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time --- 47 --- nS Qrr Reverse Recovery Charge IF=-10A,dI/dt=100A/µs, TJ=25℃ --- 53 --- nC VG=VD=0V , Force Current Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-10V,VGS=-10V,L=0.1mH,IAS=-10A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WSD20L75DN P-Ch MOSFET Normaliz -ID- Drain Current (A) On-Resistance Typical Characteristics TJ-Junction Temperature(℃) -Vds Drain-Source Voltage (V) Figure 4 Rdson-Junction Temperature -ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Rdson On-Resistance (ｍΩ) Is- Reverse Drain Current (A)) -Vgs Gate-Source Voltage (V) -Vsd Source-Drain Voltage (V) - ID- Drain Current (A) Figure 6 Source- Drain Diode Forward Figure 3 Rdson- Drain Current www.winsok.tw Page 3 Dec.2014 WSD20L75DN Power Dissipation (W) Capacitance (pF) P-Ch MOSFET Figure 7 Capacitance vs Vds Figure 9 Power De-rating -ID- Drain Current (A) TJ-Junction Temperature(℃) -ID- Drain Current (A) -Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 -Current De-rating r(t),Normalized Effective Transient Thermal Impedance -Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance www.winsok.tw Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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