WSD30100DN56

WSD30100DN56 N-Ch MOSFET Product Summery General Description The WSD30100DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 3.3mΩ 100A Applications The WSD30100DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN5X6-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 30 V Gate-Source Voltage ±20 V 1 100 A 1 56 A 140 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 45 mJ IAS Avalanche Current 30 A 4 PD@TC=25℃ Total Power Dissipation 46.3 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 --- Max. 50 Unit ℃/W --- 2.7 ℃/W Dec.2014 WSD30100DN56 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.0213 --- V/℃ VGS=10V , ID=20A --- 3.3 4 --- 4.6 6.2 1.5 1.8 2.5 V --- -5.73 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=4.5V , ID=15A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 28 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.0 2.0 Ω Qg Total Gate Charge (4.5V) --- 9.2 --- --- 6 --- Gate-Drain Charge --- 2 --- Turn-On Delay Time --- 14.3 --- Qgs Qgd Td(on) VDS=15V , VGS=4.5V , ID=20A Gate-Source Charge uA nC Rise Time VDD=12V , VGEN=10V , --- 26 --- Turn-Off Delay Time RG=2.9Ω, ID=5.7A, RL=2.1Ω --- 24 --- Fall Time --- 4.4 --- Ciss Input Capacitance --- 1350 --- Coss Output Capacitance --- 900 --- Crss Reverse Transfer Capacitance --- 65 --- Min. Typ. Max. Unit 30 --- --- mJ Min. Typ. Max. Unit A Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=30A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VG=VD=0V , Force Current VGS=0V , IS=20A , TJ=25℃ --- --- 20 --- --- 140 A --- --- 1 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t