WSD3028DN

WSD3028DN N-Ch MOSFET Product Summery General Description The WSD3028DN is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 25mΩ 19A Applications The WSD3028DN meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN3.3X3.3-8L Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ±20 V 1 25 A 1 18 A 1 19 A 1 Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ID@TA=70℃ Continuous Drain Current, VGS @ 10V 15 A IDM Pulsed Drain Current2 40 A 3 EAS Single Pulse Avalanche Energy 21 mJ IAS Avalanche Current PD@TC=25℃ 15 A 4 5 W 4 Total Power Dissipation PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 50 ℃/W RθJC Thermal Resistance Junction-Case1 --- 4 ℃/W www.winsok.tw Page 1 Dec.2014 WSD3028DN N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Rg Gate Resistance Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Min. Typ. Max. Unit 30 --- --- V --- 0.0232 --- V/℃ = VGS=10V , ID 12A --- 22 25 = VGS=4.5V , ID 8A --- 32 35 1.2 1.6 2.5 V --- -6.08 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=±20V , VDS=0V --- --- ±100 nA --- 6.5 --- S --- 2.5 3.3 Ω --- 4.1 --- --- 1 --- --- 2.1 --- --- = VGS=0V , ID 250uA Reference to 25℃ , ID=1mA VGS=VDS , ID =250uA = VDS=10V , ID 6A VDS=0V , VGS=0V , f=1MHz VDS=15V , VGS=4.5V , ID=6A Turn-On Delay Time mΩ uA nC 2 --- Rise Time VDD=15V , VGEN=10V , RG=6Ω --- 4 --- Turn-Off Delay Time ID=1A ,RL=15Ω --- 15.8 --- Fall Time --- 4 --- Ciss Input Capacitance --- 360 --- Coss Output Capacitance --- 55 --- Crss Reverse Transfer Capacitance --- 46 --- Min. Typ. Max. Unit --- --- mJ Typ. Max. Unit Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=23A 21 Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=20A,dI/dt=100A/µs,TJ=25℃ Min. --- --- 5 A --- --- 22 A --- --- 1 V --- 16.5 --- nS --- 10 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t