WSD3030DN

WSD3030DN N-Ch MOSFET Product Summery General Description The WSD3030DN is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 10mΩ 34A Applications The WSD3030DN meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN3X3-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ±20 V 1 34 A 1 21 A 1 12 A 1 Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ID@TA=70℃ Continuous Drain Current, VGS @ 10V 10 A IDM Pulsed Drain Current2 80 A 3 EAS Single Pulse Avalanche Energy 25 mJ IAS Avalanche Current PD@TC=25℃ 23 A 4 25 W 4 Total Power Dissipation PD@TA=25℃ Total Power Dissipation 2.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case www.winsok.tw 1 Page 1 Typ. Max. Unit --- 70 ℃/W --- 5 ℃/W Dec.2014 WSD3030DN N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.0232 --- V/℃ VGS=10V , ID=20A --- 10 12 VGS=4.5V , ID=10A --- 13 16 1.3 1.9 2.5 V --- -5.08 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 34 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 3.3 Ω Qg Total Gate Charge (4.5V) --- 6.1 8 Qgs Gate-Source Charge --- 2.4 2.9 Qgd Gate-Drain Charge --- 2.3 3.2 VDS=15V , VGS=4.5V , ID=20A uA nC --- 8 14 Rise Time VDD=15V , VGEN=10V , RG=6Ω --- 10 17 Turn-Off Delay Time ID=1A ,RL=15Ω --- 23 62 Fall Time --- 5 12 Ciss Input Capacitance --- 760 --- Coss Output Capacitance --- 130 --- Crss Reverse Transfer Capacitance --- 70 --- Min. Typ. Max. Unit --- --- mJ Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=23A 23 Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=20A,dI/dt=100A/µs,TJ=25℃ Min. --- --- 1 A --- --- 80 A --- --- 1 V --- 18.5 --- nS --- 10 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t