WSD3042DN56

WSD3042DN56 N-Ch MOSFET Product Summery General Description The WSD3042DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD3042DN56 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS 30V RDSON ID 9mΩ 40A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features z Advanced high cell density Trench technology DFN5X6-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ 1 Continuous Drain Current, VGS @ 10V 40 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 26 A 1 9 A 1 7 A 90 A ID@TA=25℃ ID@TA=70℃ IDM@TC=25℃ Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 300μs Pulse Drain Current Tested 2 3 EAS Single Pulse Avalanche Energy 20 mJ IAS Avalanche Current PD@TC=25℃ 10 A 4 32 W 4 Total Power Dissipation PD@TC=100℃ Total Power Dissipation 12.8 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 47 ℃/W --- 3.9 ℃/W Dec.2014 WSD3042DN56 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.027 --- V/℃ VGS=10V , ID=20A --- 9 10.8 mΩ 9.6 12 0.5 0.85 1.3 V --- -5.8 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=4.5V , ID=10A VGS=VDS , ID =250uA --- △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 40 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.9 2.0 Ω --- 16 21 --- 2.8 3.5 --- 3.7 4.4 Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V , VGS=4.5V , ID=20A uA nC --- 12 18 Rise Time VDD=15V , VGS=10V , RG=6Ω --- 10 15 Turn-Off Delay Time ID=1A ,RL=15Ω --- 24 40 Fall Time --- 5.5 8 Ciss Input Capacitance --- 1150 --- Coss Output Capacitance --- 120 --- Crss Reverse Transfer Capacitance --- 85 --- Min. Typ. Max. Unit 20 --- --- mJ Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=10A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=20A , dI/dt=100A/µs , TJ=25℃ --- --- 10 A --- --- 36 A --- --- 1 V --- 11.6 --- nS --- 4.8 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t