WSD3045DN

WSD3045DN N-Ch and P-Channel MOSFET General Description Product Summery The WSD3045DN is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 10.5mΩ 18A -30V 24mΩ -15.3A The WSD3045DN meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. DFN3.3x3.3_8_EP1 Pin Configuration Applications D2 D1D2 D1 Synchronous Rectification. Motor Control. G2 S2 G1 S1 High Current, High Speed Switching. Protable equipment application. Pin 1 Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM N-Channel P-Channel 30 -30 V ±20 ±20 V 1 18 -15.3 A 1 7 -8.4 A 44 -53 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Units 2 3 EAS Single Pulse Avalanche Energy 7.3 20 mJ IAS Avalanche Current 5.4 -9 A 4 PD@TC=25℃ Total Power Dissipation 2.1 2.1 W TSTG Storage Temperature Range -55 to 150 -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ Max. Unit --- 85 ℃/W --- 50 ℃/W Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Dec.2014 WSD3045DN N-Ch and P-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ --- 8.5 10.5 --- 10 14 1.3 1.8 2.5 V --- -5.8 --- mV/℃ VDS=30V , VGS=0V , TJ=25℃ --- --- 1 VDS=30V , VGS=0V , TJ=55℃ --- --- 5 VGS=10V , ID=6A VGS=4.5V , ID=5A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=15V , ID=5A --- 10 --- S Rg Gate Resistance VDS=24V , VGS=0V , f=1MHz --- 2.5 --- Ω Qg Total Gate Charge (4.5V) --- 2.7 --- Qgs Gate-Source Charge --- 1.3 --- Qgd Gate-Drain Charge --- 1.7 --- VDS=20V , VGS=4.5V , ID=6A uA nC --- 5 --- Rise Time VDD=12V , VGS=10V , RG=3.3Ω --- 11 --- Turn-Off Delay Time ID=5A --- 11.5 --- Fall Time --- 2.6 --- Ciss Input Capacitance --- 250 --- Coss Output Capacitance --- 40 --- Crss Reverse Transfer Capacitance --- 30 --- Min. Typ. Max. Unit 5 --- --- mJ Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=25V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=10A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=5A , TJ=25℃ --- --- 6 A --- --- 15 A --- --- 1.2 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t