WSD3050DN

WSD3050DN N-Ch MOSFET Product Summery General Description The WSD3050DN is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 30V 7mΩ 50A Applications The WSD3050DN meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN3X3-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ 10s Steady State Units 30 V ±20 V 1 50 A 1 37 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 1 14 1 11.4 Continuous Drain Current, VGS @ 10V ID@TA=70℃ Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current2 3 12 A 9.7 A 100 A EAS Single Pulse Avalanche Energy 50 mJ IAS Avalanche Current 14 A 26 W PD@TC=25℃ 4 Total Power Dissipation 4 2.5 1.6 PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-Ambient 1 --- Max. 70 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 50 ℃/W --- 4.7 ℃/W RθJC www.winsok.tw Typ. 1 Thermal Resistance Junction-Case Page 1 Unit Dec.2014 WSD3050DN N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.024 --- V/℃ VGS=10V , ID=15A --- 6.7 8.5 VGS=4.5V , ID=10A --- 8.2 11 1.5 1.8 2.5 V --- -3.5 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 40 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.0 1.5 Ω Qg Total Gate Charge (4.5V) --- 10 12 Qgs Gate-Source Charge --- 3.5 4.1 Qgd Gate-Drain Charge --- 4.2 4.7 Turn-On Delay Time --- 9 17 Td(on) Tr Td(off) Tf VDS=15V , VGS=10V , ID=15A uA nC Rise Time VDD=15V , VGS=10V , RG=6Ω --- 11 23 Turn-Off Delay Time ID=1A ,RL=15Ω --- 29 52 --- 7 12 --- 1200 --- --- 185 --- --- 113 --- Min. Typ. Max. Unit 18 --- --- mJ Min. Typ. Max. Unit --- --- 20 A --- --- 100 A --- 1 V Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=20A Diode Characteristics Symbol IS ISM Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=2A , TJ=25℃ --- trr Reverse Recovery Time 15 --- nS Reverse Recovery Charge IF=15A,dISD/dt=100A/µs,TJ=25℃ --- Qrr --- 7 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t