WSD3070DN
N-Ch MOSFET
General Description
Product Summery
The WSD3070DN is the highest
performance trench N-ch MOSFETs with
extreme high cell density , which provide
excellent RDSON and gate charge for most
of the synchronous buck converter
applications .
BVDSS
RDSON
ID
25V
2.5mΩ
70A
Applications
The WSD3070DN meet the RoHS and
Green Product requirement , 100%
EAS guaranteed with full function
reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features
z Load Switch
z Advanced high cell density Trench technology
DFN3.3X3.3 Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
±12
V
ID@TC=25℃
1
Continuous Drain Current, VGS @ 10V
70
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
55
A
1
20
A
1
16
A
200
A
Avalanche Energy ,Single Pulse (L=0.5mH)
100
mJ
pulse(L=0.5mH)3
ID@TA=25℃
ID@TA=70℃
IDM@TC=25℃
EAS
IAS
PD@TC=25℃
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2
3
Avalanche Current ,Single
20
A
4
62.5
W
4
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
1.78
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
RθJA
Thermal Resistance Junction-Ambient
RθJC
1
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Thermal Resistance Junction-Case
Page 1
1
Typ.
Max.
Unit
---
70
℃/W
---
2.5
℃/W
Dec.2014
WSD3070DN
N-Ch MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
25
---
---
V
Reference to 25℃ , ID=1mA
---
0.028
V/℃
VGS=4.5V , ID=20A
---
2.5
--3.4
VGS=2.5V , ID=20A
---
3.0
4.0
0.5
0.8
1.1
V
---
-6.16
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
---
---
1
VDS=24V , VGS=0V , TJ=55℃
---
---
5
VGS=VDS , ID =250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=5V , ID=40A
---
74
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
0.85
1.1
Ω
Qg
Total Gate Charge (4.5V)
---
96
134
Qgs
Gate-Source Charge
---
5.5
7.7
Qgd
Gate-Drain Charge
---
16
22
---
16.6
31
Td(on)
Tr
Td(off)
Tf
VDS=15V, VGS=10V, IDS=20A
Turn-On Delay Time
Rise Time
VDD=15V, RL=15Ω ,
---
12.2
24
Turn-Off Delay Time
IDS=1A, VGEN=10V,
---
135
244
Fall Time
RG=6Ω
---
48
87
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V , VGS=0V , f=1MHz
uA
nC
ns
---
4920
---
---
510
---
---
350
---
Min.
Typ.
Max.
Unit
pF
Diode Characteristics
Symbol
Parameter
Conditions
1,6
IS
Continuous Source Current
ISM
Pulsed Source Current2,6
2
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25℃
IF=40A , dI/dt=100A/µs , TJ=25℃
---
---
20
A
---
---
70
A
---
---
1.1
V
---
14.8
---
nS
---
3.9
---
nC
Note d:Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
Note e:Guaranteed by design, not subject to production testing.
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Page 2
Dec.2014
WSD3070DN
N-Ch MOSFET
Typical Operating Characteristics
Power Dissipation
Drain Current
70
60
60
50
ID - Drain Current (A)
Ptot - Power (W)
50
40
30
20
40
30
20
10
10
o
0
o
TC=25 C
0
20
40
60
0
80 100 120 140 160
TC=25 C,VG=10V
0
20
Tj - Junction Temperature (°C)
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Thermal Transient Impedance
Safe Operation Area
Rd
s( o
n)
L im
100
1ms
10
DC
o
10ms
TC=25 C
1
0.01
0.1
1
10
Normalized Transient Thermal Resistance
3
it
500
ID - Drain Current (A)
40
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1E-3
1E-4
100 300
Single Pulse
o
1E-5
1E-6
VDS - Drain - Source Voltage (V)
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1
RθJC :2 C/W
1E-5
1E-4
1E-3
0.01
0.1
Square Wave Pulse Duration (sec)
Page 3
Dec.2014
WSD3070DN
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Output Characteristics
150
Drain-Source On Resistance
6
VGS=3,4,5,6,7,8,9,10V
2V
5
RDS(ON) - On - Resistance (mΩ)
ID - Drain Current (A)
125
100
75
50
25
1.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
4
V GS=2.5V
3
VGS=4.5V
2
1
0
3.0
0
30
60
90
ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
IDS=250 µA
Normalized T hreshold Voltage
RDS(ON) - On Resistance (mΩ)
IDS=20A
12
9
6
3
0
1
2
3
4
5
6
7
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
8
VGS - Gate - Source Voltage (V)
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150
VDS - Drain-Source Voltage (V)
15
0
120
-25
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
Page 4
Dec.2014
WSD3070DN
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.5
VGS =4.5V
100
2.0
IS - Source Current (A)
Normalized On Resistance
IDS =20A
1.5
1.0
o
Tj=150 C
10
o
Tj=25 C
1
0.5
o
0.0
-50 -25
RON@Tj=25 C: 2.5mΩ
0
25
50
75
0.1
0.0
100 125 150
0.6
0.8
1.0
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
V DS=15V
9 I =20A
DS
VGS - Gate - source Voltage (V)
5000
1.2
10
Frequency=1MHz
6250
C - Capacitance (pF)
0.4
Tj - Junction Temperature (°C)
7500
Ciss
3750
2500
1250
Coss
0
0.2
8
7
6
5
4
3
2
1
Crss
0
5
10
15
20
25
0
0
30
VDS - Drain - Source Voltage (V)
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20
40
60
80
100
QG - Gate Charge (nC)
Page 5
Dec.2014
WSD3070DN
N-Ch MOSFET
DFN3.3x3.3
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Page 6
Dec.2014
WSD3070DN
N-Ch MOSFET
Classification Profile
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Page 7
Dec.2014
WSD3070DN
N-Ch MOSFET
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
60-150 seconds
217 °C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak package body Temperature
(Tp)*
Time 25°C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
3
Package
Volume mm
Thickness