WSD30L120DN56

WSD30L120DN56 P-Ch MOSFET Product Summery General Description The WSD30L120DN56 is the highest performance trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -30V 3.6mΩ -120A Applications The WSD30L120DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN5X6-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ 10s Steady State Units -30 V ±20 V 1 -120 A 1 -76 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V 1 -27 1 -24 Continuous Drain Current, VGS @ -10V ID@TA=70℃ Continuous Drain Current, VGS @ -10V IDM Pulsed Drain Current2 -22 A -19 A -400 A 3 EAS Single Pulse Avalanche Energy 324 mJ IAS Avalanche Current -36 A 78 W PD@TC=25℃ 4 Total Power Dissipation 4 6.8 6.25 PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 55 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 20 ℃/W --- 1.6 ℃/W RθJC www.winsok.tw Typ. 1 Thermal Resistance Junction-Case Page 1 Dec.2014 WSD30L120DN56 P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.0232 --- V/℃ VGS=-10V , ID=-30A --- 2.9 3.6 VGS=-4.5V , ID=-10A --- 5.0 6.8 -1.2 -1.5 -2.5 V --- 4.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-30A --- 28 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 5 Ω Qg Total Gate Charge (-4.5V) --- 135 --- --- 12 ----- Qgs Qgd Td(on) VDS=-15V , VGS=-10V , ID=-30A Gate-Source Charge Gate-Drain Charge --- 36 Turn-On Delay Time --- 22 --- uA nC Rise Time VDD=-15V , VGEN=-10V , RG=6Ω --- 25 --- Turn-Off Delay Time ID=-1A ,RL=15Ω --- 163 --- Fall Time --- 104 --- Ciss Input Capacitance --- 6100 --- Coss Output Capacitance --- 1130 --- Crss Reverse Transfer Capacitance --- 1110 --- Min. Typ. Max. Unit 300 --- --- mJ Min. Typ. Unit Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.5mH , IAS=-36A Diode Characteristics Symbol Parameter Conditions --- --- Max. -40 --- --- -400 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Reverse Recovery Time IF=-15A , dI/dt=100A/µs , --- 32 --- nS Reverse Recovery Charge TJ=25℃ --- 16 --- nC 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 trr Qrr VG=VD=0V , Force Current A Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t