WSD30L40DN

WSD30L40DN P-Ch MOSFET General Description Product Summery The WSD30L40DN is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID -30V 11mΩ -40A Applications The WSD30L40DN meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System Features z Load Switch z Advanced high cell density Trench technology DFN3X3-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ 10s Steady State Units -30 V ±20 V 1 -40 A 1 -25 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V 1 -14.5 1 -10.5 Continuous Drain Current, VGS @ -10V ID@TA=70℃ Continuous Drain Current, VGS @ -10V IDM Pulsed Drain Current2 -12 A -9.8 A -70 A 3 EAS Single Pulse Avalanche Energy 81 mJ IAS Avalanche Current -18 A 32.9 W PD@TC=25℃ 4 Total Power Dissipation 4 3.6 3.1 PD@TA=25℃ Total Power Dissipation W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 75 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 40 ℃/W --- 3.8 ℃/W RθJC www.winsok.tw Typ. 1 Thermal Resistance Junction-Case Page 1 Dec.2014 WSD30L40DN P-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.0232 --- V/℃ --- 11 14 --- 18 24 -1.3 -1.8 -2.3 V --- 4.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=-10V , ID=-20A VGS=-4.5V , ID=-10A VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-30A --- 15 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 9 --- Ω Qg Total Gate Charge (-4.5V) --- 30 --- --- 1.2 --- --- 11 --- Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-15V , VGS=-4.5V , ID=-20A uA nC --- 11 --- Rise Time VDD=-15V , VGS=-10V , RG=6Ω --- 11 --- Turn-Off Delay Time ID=-1A ,RL=15Ω --- 101 --- Fall Time --- 60 --- Ciss Input Capacitance --- 1380 --- Coss Output Capacitance --- 280 --- Crss Reverse Transfer Capacitance --- 217 --- Min. Typ. Max. Unit 78 --- --- mJ Min. Typ. Max. Unit --- --- -20 A --- --- -70 A Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.5mH , IAS=-18A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current2,6 VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time --- 20 --- nS Qrr Reverse Recovery Charge IF=-20A,dI/dt=100A/µs, TJ=25℃ --- 8 --- nC VG=VD=0V , Force Current Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t≦10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.5mH,IAS=-18A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WSD30L40DN P-Ch MOSFET Typical Characteristics 150 ID=-20A -ID Drain Current (A) 125 VGS=-10V VGS=-7V 100 75 VGS=-5V 50 VGS=-4.5V VGS=-3V 25 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VDS , Drain-to-Source Voltage (V) 12 Fig.2 On-Resistance vs. G-S Voltage Fig.1 Typical Output Characteristics 10 -VGS Gate to Source Voltage (V) -IS Source Current(A) VDS=-15V 8 TJ=150℃ TJ=25℃ 4 0 0.00 0.25 0.50 0.75 ID=-20A 8 6 4 2 0 1.00 0 -VSD , Source-to-Drain Voltage (V) 18 27 QG , Total Gate Charge (nC) 36 45 Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics of Reverse 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 9 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature (℃ ) 150 -50 Fig.5 Normalized VGS(th) vs. TJ www.winsok.tw 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Page 3 Dec.2014 WSD30L40DN P-Ch MOSFET 1000.00 10000 F=1.0MHz 10us Ciss 1000 100us 10.00 Coss -ID (A) Capacitance (pF) 100.00 Crss 100 1ms 10ms 100ms 1.00 DC 0.10 TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 21 0.1 25 1 -VDS , Drain to Source Voltage (V) Fig.7 Capacitance 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM SINGLE PULSE TON T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.winsok.tw Fig.11 Unclamped Inductive Switching Waveform Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  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