WSD30L60DN56

WSD30L60DN56 P-Ch MOSFET Features Product Summery · -30V/-45A, RDS(ON) = 12mW(max.) @ VGS =-10V RDS(ON) = 17mW(max.) @ VGS =-6V RDS(ON) = 21mW(max.) @ VGS =-4.5V · Reliable and Rugged · Lead Free and Green Devices Available DFN5X6A-8_EP (RoHS Compliant) Applications · Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings Symbol (TA = 25°C Unless Otherwise Noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 ID a IDM Continuous Drain Current (VGS =-10V) a ID c IS IAS b b EAS TJ R qJC c -45 TC =100°C -26 Avalanche Energy, Single pulse (L=0.3mH) 101 Maximum Junction Temperature 150 Maximum Power Dissipation a TC =25°C -26 Maximum Power Dissipation Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Case V -60 Avalanche Current, Single pulse (L=0.3mH) PD a R qJA -12 -4 Storage Temperature Range PD TA =70°C Diode Continuous Forward Current TST G c -15 300ms Pulsed Drain Current (V GS =-10V) Continuous Drain Current (VGS =-10V) a TA =25°C Unit -55 to 150 TA =25°C 4.2 TA =70°C 2.7 TC =25°C 31 TC =100°C 12.5 t £ 10s 30 Steady State 65 Steady State 4 A mJ °C W °C/W 2 Note a：Surface Mounted on 1in pad area, t £ 10sec. o o Note b：UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C). o Note c：The power dissipation PD is based on TJ(MAX) = 150 C, and it is useful for reducing junction-to-case thermal resistance ( RqJC ) when additional heat sink is used. www.winsok.tw Page 1 Dec.2014 WSD30L60DN56 P-Ch MOSFET Electrical Characteristics Parameter Symbol (TA = 25°C Unless Otherwise Noted) Test Conditions Min. Typ. Max. Unit -30 - - V - - -1 - - -30 -1.5 -2 -2.5 V nA Static Characteristics BVDSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) d V GS=0V, ID S=-250mA V DS=-24V, VGS=0V TJ=85°C mA Gate Threshold Voltage V DS=V GS, I DS=-250mA Gate Leakage Current V GS=±25V, V DS=0V - - ±100 V GS=-10V, ID S=-15A - 9.6 12 V GS=-6V, I DS=-10A - 13 17 V GS=-4.5V, I DS=-5A - 15 21 ISD=-1A, V GS=0V - -0.7 -1 V - 22 - ns - 15 - nC W Drain-Source On-state Resistance mW Diode Characteristics VSD trr d e Qrr e Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Dynamic Characteristics ISD=-15A, diSD /dt=100A/ms e Rg Gate Resistance VGS=0V, VDS=0V,F=1MHz - 2 - C iss Input Capacitance - 1550 - Coss Output Capacitance - 315 - Crss Reverse Transfer Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz - 245 - t d(ON) Turn-on Delay Time - 13 - - 15 - - 50 - - 29 - - 31 - - 4.3 - - 10 - tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VDD=-15V, RL=15W, IDS=-1A, V GEN =-10V, RG=6W Turn-off Fall Time Gate Charge Characteristics pF ns e Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-15V, VGS=-10V, IDS=-15A nC Note d : Pulse test ; pulse width£300ms, duty cycle£2%. Note e : Guaranteed by design, not subject to production testing. www.winsok.tw Page 2 Dec.2014 WSD30L60DN56 P-Ch MOSFET Typical Operating Characteristics Power Dissipation Drain Current 5 18 15 -ID - Drain Current (A) Ptot - Power (W) 4 3 2 1 12 9 6 3 o TA=25 C 0 0 20 40 o 60 80 0 100 120 140 160 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 2 Rd s(o 1ms 10ms 100ms 1s 1 DC O TC=25 C 0.1 0.01 0.1 1 10 Normalized Transient Thermal Resistance n) L im it 100 -ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 300 10 TA=25 C,VG=-10V 100 300 -VDS - Drain - Source Voltage (V) www.winsok.tw Duty = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 2 1E-3 1E-4 Mounted on 1in pad o RqJA :30 C/W 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Page 3 Dec.2014 WSD30L60DN56 P-Ch MOSFET Typical Operating Characteristics (Cont.) Output Characteristics 60 35 VGS=5,-6,-7,-8,-9,-10V 30 RDS(ON) - On - Resistance (mW) -4.5V 50 -ID - Drain Current (A) Drain-Source On Resistance 40 -4V 30 20 -3.5V 10 VGS=-4.5V 25 20 VGS=-6V 15 VGS=-10V 10 5 -3V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 10 20 30 40 -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 60 IDS= -250mA 1.4 Normalized T hreshold Voltage 50 RDS(ON) - On Resistance (mW) 60 1.6 IDS=-15A 40 30 20 10 0 50 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 -VGS - Gate - Source Voltage (V) www.winsok.tw 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 4 Dec.2014 WSD30L60DN56 P-Ch MOSFET Typical Operating Characteristics (Cont.) Output Characteristics 60 35 VGS=5,-6,-7,-8,-9,-10V 30 RDS(ON) - On - Resistance (mW) -4.5V 50 -ID - Drain Current (A) Drain-Source On Resistance 40 -4V 30 20 -3.5V 10 VGS=-4.5V 25 20 VGS=-6V 15 VGS=-10V 10 5 -3V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 10 20 30 40 -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 60 IDS= -250mA 1.4 Normalized T hreshold Voltage 50 RDS(ON) - On Resistance (mW) 60 1.6 IDS=-15A 40 30 20 10 0 50 2 3 4 5 6 7 8 9 1.0 0.8 0.6 0.4 0.2 -50 -25 10 -VGS - Gate - Source Voltage (V) www.winsok.tw 1.2 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) Page 5 Dec.2014 WSD30L60DN56 N-Ch MOSFET Package Information F F1 D1 E E1 H K G1 G C A D e MILLIMETERS INCHES MAX. MIN. MAX. 0.90 1.20 0.035 0.047 0.020 B 0.3 0.51 0.012 C 0.19 0.25 0.007 0.010 D 4.80 5.30 0.189 0.209 D1 4.00 4.40 0.157 0.173 E 5.90 6.20 0.232 0.244 5.80 0.217 0.228 E1 5.50 e 1.27 BSC 0.050 BSC F 0.05 0.30 0.002 0.012 F1 0.35 0.75 0.014 0.030 G 0.05 0.30 0.002 0.012 0.030 G1 0.35 0.75 0.014 H 3.34 3.9 0.131 0.154 K 0.762 - 0.03 - Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 10 mil. www.winsok.tw Page 6 4.6 0.77 3.6 6.1 0.5 1.27 0.71 MIN. 0.61 A RECOMMENDED LAND PATTERN DFN5x6A-8_EP 1.18 1.16 S Y M B O L B UNIT: mm Dec.2014 WSD30L60DN56 N-Ch MOSFET Classification Profile www.winsok.tw Page 7 Dec.2014 WSD30L60DN56 N-Ch MOSFET Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 3 Package Volume mm Thickness