WSD40120DN56

WSD40120DN56 N-Ch MOSFET General Description Product Summery The WSD40120DN is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD40120DN meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 40V 1.85mΩ 120A Applications z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System Features z Power Tool Application z Advanced high cell density Trench technology DFN5X6-8 Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM Rating Units Drain-Source Voltage 40 V Gate-Source Voltage ±20 V 1,7 120 A 1,7 100 A 400 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 2 3 EAS Single Pulse Avalanche Energy 240 mJ IAS Avalanche Current 31 A 4 PD@TC=25℃ Total Power Dissipation 104 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.winsok.tw Thermal Resistance Junction-Case Page 1 1 Max. Unit --- 55 ℃/W --- 1.2 ℃/W Dec.2014 WSD40120DN56 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) RDS(ON) VGS(th) △VGS(th) 2 Static Drain-Source On-Resistance 2 Static Drain-Source On-Resistance Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.043 --- V/℃ VGS=10V , ID=30A --- 1.85 2.4 mΩ --- 2.5 3.3 mΩ 1.5 1.8 2.5 V mV/℃ VGS=4.5V , ID=20A VGS=VDS , ID =250uA VGS(th) Temperature Coefficient --- -6.94 --- VDS=48V , VGS=0V , TJ=25℃ --- --- 2 VDS=48V , VGS=0V , TJ=55℃ --- --- 10 uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 55 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.1 2 Ω Qg Total Gate Charge (10V) --- 76 91 Qgs Gate-Source Charge --- 12 14.4 Qgd Gate-Drain Charge --- 15.5 18.6 VDS=20V , VGS=10V , ID=40A nC --- 20 24 Rise Time VDD=30V , VGEN=10V , RG=1Ω, --- 10 12 Turn-Off Delay Time ID=1A ,RL=15Ω. --- 58 69 Fall Time --- 34 40 Ciss Input Capacitance --- 4350 --- Coss Output Capacitance --- 690 --- Crss Reverse Transfer Capacitance --- 370 --- Min. Typ. Max. Unit 198 --- --- mJ Min. Typ. Max. Unit Td(on) Tr Td(off) Tf Turn-On Delay Time VDS=20V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=31A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage2 2,6 VG=VD=0V , Force Current VGS=0V , IS=20A , TJ=25℃ --- --- 100 A --- --- 400 A --- --- 1.1 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t