WSD4062DN56

WSD4062DN56 N-Ch MOSFET General Description Product Summery The WSD4062DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD4062DN56 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 40V 7.0mΩ 62A Applications z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System Features z Power Tool Application z Advanced high cell density Trench technology DFN5X6-8L Pin Configuration z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS VGS Drain-Source Voltage 40 V Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 62 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 29 A 60 A 42 mJ IDM EAS a Pulsed Drain Current Single Pulse Avalanche Energyb IAS Avalanche Current 13 A PD@Ta=25℃ Total Power Dissipation 2.1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 Thermal Resistance Junction-Case 1 Max. Unit --- 60 ℃/W --- 3.9 ℃/W Note a：Package is limited to 60A. o o Note b：UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature Tj=25 C). www.winsok.tw Page 1 Dec.2014 WSD4062DN56 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) RDS(ON) VGS(th) △VGS(th) 2 Static Drain-Source On-Resistance 2 Static Drain-Source On-Resistance Gate Threshold Voltage VGS(th) Temperature Coefficient Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.043 --- V/℃ VGS=10V , ID=20A --- 7.0 10.5 mΩ --- 9.0 13.5 mΩ 1.5 1.8 2.5 V mV/℃ VGS=4.5V , ID=15A VGS=VDS , ID =250uA --- -6.94 --- VDS=48V , VGS=0V , TJ=25℃ --- --- 2 VDS=48V , VGS=0V , TJ=55℃ --- --- 10 uA IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 33 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.1 2 Ω Qg Total Gate Charge (10V) --- 76 91 Qgs Gate-Source Charge --- 12 14.4 Qgd Gate-Drain Charge --- 15.5 18.6 --- 12 16 Td(on) VDS=20V , VGS=10V , ID=40A Turn-On Delay Time nC Rise Time VDD=30V , VGEN=10V , RG=1Ω, --- 9 12 Turn-Off Delay Time ID=1A ,RL=15Ω. --- 25 32 Fall Time --- 6 9 Ciss Input Capacitance --- 1150 --- Coss Output Capacitance --- 140 --- Crss Reverse Transfer Capacitance --- 90 --- Min. Typ. Max. Unit --- --- 20 A --- --- 60 A --- --- 1.3 V Tr Td(off) Tf VDS=20V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=20A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t