WSD75100DN56

WSD75100DN56 N-Ch MOSFET General Description Product Summery The WSD75100DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD75100DN56 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDSON ID 75V 5.3mΩ 100A Applications z DC-DC converter switching for Networkong z General purpose switching DFN5X6-8 Pin Configuration Features z Reliable and Rugged z Lead Free and Green Devices Available (RoHS Compliant) Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±25 V TJ ID Maximum Junction Temperature IS ID IDM PD RθJA RqJC 150 °C -55 to 150 °C Diode Continuous Forward Current,TC=25°C 50 A Continuous Drain Current, VGS=10V,TC=25°C 100 A Continuous Drain Current, VGS=10V,TC=100°C 73 A Pulsed Drain Current ,TC=25°C 400 A Maximum Power Dissipation,TC=25°C 155 W Maximum Power Dissipation,TC=100°C 62 W Storage Temperature Range Thermal Resistance-Junction to Ambient ,t =10s ̀ Thermal Resistance-Junction to Ambient ,Steady State Thermal Resistance-Junction to Case 20 °C 60 °C 0.8 °C IAS Avalanche Current, Single pulse,L=0.5mH 30 A EAS Avalanche Energy, Single pulse,L=0.5mH 225 mJ www.winsok.tw Page 1 Dec.2014 WSD75100DN56 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID 250uA = △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage △VGS(th) Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Rg Gate Resistance Qg Total Gate Charge (10V) Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) VGS=VDS , ID =250uA VGS(th) Temperature Coefficient IDSS = VGS=10V , ID 25A Min. Typ. Max. Unit 75 --- --- V --- 0.043 --- V/℃ --- 5.3 6.4 mΩ 2.0 3.0 4.0 V mV/℃ --- -6.94 --- VDS=48V , VGS=0V , TJ=25℃ --- --- 2 VDS=48V , VGS=0V , TJ=55℃ --- --- 10 VGS=±20V , VDS=0V --- --- ±100 nA --- 50 --- S --- 1.0 2 Ω --- 65 85 --- 20 --- = VDS=5V , ID 20A VDS=0V , VGS=0V , f=1MHz VDS=20V , VGS=10V , ID=40A --- nC --- --- 27 Rise Time VDD=30V , VGEN=10V , RG=1Ω, --- 14 26 Turn-Off Delay Time ID=1A ,RL=15Ω. --- 60 108 Fall Time --- 37 67 Ciss Input Capacitance --- 3500 --- Coss Output Capacitance --- 395 --- Crss Reverse Transfer Capacitance --- 195 --- Min. Typ. Max. Unit 198 --- --- mJ Min. Typ. Max. Unit Tr Td(off) Tf Turn-On Delay Time 17 uA VDS=20V , VGS=0V , f=1MHz 49 ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=30A Diode Characteristics Symbol Parameter Conditions 1,6 IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage2 2,6 VG=VD=0V , Force Current VGS=0V , IS=20A , TJ=25℃ --- --- 50 A --- --- 100 A --- --- 1.4 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t